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Deep Level Transient Spectroscopy Study of Thin Film Diamond

  • K. Srikanth (a1), S. Ashok (a1), W. Zhu (a2), A. Badzian (a2) and R. Messier (a2)...

Abstract

We have demonstrated the applicability of DLTS to semiconducting diamond thin films. This paper includes details on the capacitance-voltage measurements, the DLTS spectrum and the DLTS spectra as a function of bias. Our study was done with an aluminum Schottky contact on polycrystalline diamond film. We found a strong temperature dependence of the Schottky diode capacitance with a reduction of effective dopant concentration from 4 × 1014 cm−3 at 300K to 2 × 1014 cm−3 at 200K. The DLTS signal had a good signal to noise ratio, characteristic line-shape and clear peaks. The trap concentration was 8 × 1013 cm−3 (at 400/s rate window) with an activation energy of 0.31 eV and a capture cross section of 1.15 × 10−18 cm−2. The spectra showed a bias dependence of peak height and position.

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Deep Level Transient Spectroscopy Study of Thin Film Diamond

  • K. Srikanth (a1), S. Ashok (a1), W. Zhu (a2), A. Badzian (a2) and R. Messier (a2)...

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