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Deep Level Energy Analysis of Surface and Bulk Defects Using a Noncontact Laser/Microwave Photoconductance Technique

  • A. Buczkowski (a1), G. A. Rozgonyi (a1) and F. Shimura (a1)

Abstract

A noncontact technique for deep level energy analysis has been discussed based on a laser excitation/microwave reflection transient photoconductance procedure. An algorithm for separation of surface and bulk recombination effects was developed to independently determinesurface and bulk energy states. Deep energy levels associated with trapping and recombination processes have been calculated from the temperature dependence of surface recombination velocity and bulk recombination lifetime, based on state occupation statistics. Results have been compared with conventional DLTS data for silicon samples intentionally doped with metals during crystal growth.

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Deep Level Energy Analysis of Surface and Bulk Defects Using a Noncontact Laser/Microwave Photoconductance Technique

  • A. Buczkowski (a1), G. A. Rozgonyi (a1) and F. Shimura (a1)

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