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Deep Level Defects in He-implanted n-6H-SiC Studied by Deep Level Transient Spectroscopy

  • X. D. Chen (a1), C. C. Ling (a1), S. Fung (a1), C. D. Beling (a1), H. S. Wu (a1), G. Brauer (a2), W. Anwand (a2) and W. Skorupa (a2)...

Abstract

Deep level transient spectroscopy (DLTS) was used to study deep level defects in He-implanted n-type 6H-SiC samples. Low dose He-implantation (fluence ∼2×1011 ions/cm2) has been employed to keep the as-implanted sample conductive so that studying the introduction and the thermal evolution of the defects becomes feasible. A strong broad DLTS peak at 275K-375K (called signal B) and another deep level at EC-0.50eV were observed in the as-implanted sample. The intensity of the peak B was observed to linearly proportional to the logarithm of the filling pulse width, which is a signature for electron capture into a defect related to dislocation. After annealing at 500°C, the intensity of peak was significantly reduced and the remained signal has properties identical to the well known Z1/Z2 deep defects, although it is uncertain whether the Z1/Z2 exist in the as-implanted sample or it is the annealing product of the dislocation-related defect. The E1/E2 defect (EC-0.3/0.4eV) was not presence in the as-implanted sample, but was observed after the 300°C annealing.

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Deep Level Defects in He-implanted n-6H-SiC Studied by Deep Level Transient Spectroscopy

  • X. D. Chen (a1), C. C. Ling (a1), S. Fung (a1), C. D. Beling (a1), H. S. Wu (a1), G. Brauer (a2), W. Anwand (a2) and W. Skorupa (a2)...

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