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Deep Level Defects in He-implanted n-6H-SiC Studied by Deep Level Transient Spectroscopy

Published online by Cambridge University Press:  15 March 2011

X. D. Chen ,
C. C. Ling ,
S. Fung ,
C. D. Beling ,
H. S. Wu ,
G. Brauer ,
W. Anwand  and
W. Skorupa
X. D. Chen
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
C. C. Ling
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
S. Fung
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
C. D. Beling
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
H. S. Wu
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
G. Brauer
Affiliation:
Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf, Postfach 510119, D-01314 Dresden, Germany
W. Anwand
Affiliation:
Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf, Postfach 510119, D-01314 Dresden, Germany
W. Skorupa
Affiliation:
Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf, Postfach 510119, D-01314 Dresden, Germany
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Abstract

Deep level transient spectroscopy (DLTS) was used to study deep level defects in He-implanted n-type 6H-SiC samples. Low dose He-implantation (fluence ∼2×1011 ions/cm2) has been employed to keep the as-implanted sample conductive so that studying the introduction and the thermal evolution of the defects becomes feasible. A strong broad DLTS peak at 275K-375K (called signal B) and another deep level at EC-0.50eV were observed in the as-implanted sample. The intensity of the peak B was observed to linearly proportional to the logarithm of the filling pulse width, which is a signature for electron capture into a defect related to dislocation. After annealing at 500°C, the intensity of peak was significantly reduced and the remained signal has properties identical to the well known Z1/Z2 deep defects, although it is uncertain whether the Z1/Z2 exist in the as-implanted sample or it is the annealing product of the dislocation-related defect. The E1/E2 defect (EC-0.3/0.4eV) was not presence in the as-implanted sample, but was observed after the 300°C annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J5.5
Copyright
Copyright © Materials Research Society 2004

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