Hostname: page-component-76fb5796d-skm99 Total loading time: 0 Render date: 2024-04-26T21:51:15.894Z Has data issue: false hasContentIssue false
  • English
  • Français

Deep Level Defects in GaN Characterized by Capacitance Transient Spectroscopies

Published online by Cambridge University Press:  26 February 2011

W. Gütz ,
N. M. Johnson ,
R. A. Street ,
H. Amano  and
I. Akasaki
W. Gütz
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, Nagoya, Japan
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, Nagoya, Japan
Get access

Abstract

Electronic defects in MOCVD-grown n-type GaN were characterized by conventional deep level transient spectroscopy (DLTS) and by photoemission capacitance transient spectroscopy (O-DLTS) performed on Schottky diodes. With DLTS two deep levels were detected with thermal activation energies for electron emission to the conduction band of 0.16 eV and 0.44 eV. With O-DLTS we demonstrate four new deep levels with optical threshold energies for electron photoemission of ∼ 0.87 eV, 0.97 eV, 1.25 eV and 1.45 eV. The O-DLTS apparatus and the measurement are discussed in detail. We also report characterization of the Au-GaN barrier height of the Schottky diode by internal photoemission.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 491
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Akasaki, I., Amano, H., Koide, N., Kotaki, M., K. Manabe, Physica B 185, 428, (1993)Google Scholar
2. Nakamura, S., Mukai, T., and Senoh, M., Appl. Phys. Lett. 64, 1687 (1994)Google Scholar
3. Morkoç, H., Strite, S., Gao, G.B., Lin, M.E., Sverdlov, B., and Burns, M., J. Appl. Phys. 76, 1363 (1994)Google Scholar
4. Chantre, A., Vincent, G., and Bois, D., Phys. Rev. B 23, 5335 (1981)Google Scholar
5. Götz, W., Johnson, N.M., Amano, H., and Akasaki, I., Appl. Phys. Lett. 65, 463 (1994)Google Scholar
6. Hacke, P., Detchprohm, T., Hiramatsu, K., and Sawaki, N., J. Appl. Phys. 76, 304 (1994)Google Scholar
7. Götz, W., Johnson, N.M., Street, R.A., Amano, H., and Akasaki, I., Appl. Phys. Lett. 66, 1340, (1995)Google Scholar
8. Johnson, N.M., Mater. Res. Soc. Symp. Proc. 69, 75 (1986)Google Scholar
9. Fowler, R.H., Phys. Rev. 38, 45 (1931)Google Scholar