Skip to main content Accessibility help
×
Home

Deep Donor and Acceptor Levels Induced by High Temperature and long time Annealing in LEC Gallium Arsenide

  • G. Marrakchi (a1), A. Kalboussi (a1), G. Guillot (a1), M. Ben Salem (a2), H. Maaref (a2) and E. Molva (a3)...

Abstract

The effects of high temperature isothermal annealing on the electrical properties of donor and acceptor defects in n-type LEC GaAs are investigated. The annealing experiments are performed under As-rich atmosphere at 1000°C for 1–4 and 16 hours followed by a very quick quenching into cold water of the quartz ampoules containing the samples. The donor and acceptor levels are detected respectively by standard (DLTS) and optical (ODLTS) deep level spectroscopy. DLTS results show the presence of one single donor level present in unannealed and annealed samples at Ec - 0.79eV which is identified as the well known electron trap EL2 Only the sample annealed for 16 hs exhibits the presence of a new electron trap named TAI at Ec - 0.32eV. The appearance of TAI is correlated in one hand with the evolution of EL2 concentration and in the other hand to the effect of long duration (16 hs) of the treatment. For acceptor levels, two hole traps HT1 and HT2 are detected respectively at EV + 0.18 eV and EV+ 0.28 eV. HT1 is detected only in samples annealed for 4 and 16 hs and HT2 is detected in all studied samples. Photoluminescence (PL) measurements show the presence of the 1.44 eV band corresponding to gallium antisite GaAs defect. This band observed in unannealed and annealed samples shows that GaAs remains stable even after thermal annealing at lOOO°C for 16 hs and it is correlated with the presence of HT2.

Copyright

References

Hide All
1. Martin, G. M., Mitonneau, A. and Mircea, A.. Elec. Lett, 13, 191 (1977)
2. von Bardeleben, H. J., Stivenard, D., Deresmes, D., Hubert, A. and Bourgoin, J. C., Phy. Rev. B, 34, 7192 (1986)
3. von Bardeleben, H. J. and Bourgoin, J. C., Phys. Rev. B, 36, 7671 (1987)
4. Baraff, G. A. and Schulter, M.. Phys. Rev. Lett. 33, 7346 (1986)
5. Marrakchi, G., Guillot, G. and Nouailhat, A., Mat. Res. Soc. Symp. Proc. 104, 5019 (1988)
6. Marrakchi, G., Thèse de Doctorat INSA Lyon (France), dec 1987
7. Marrakchi, G., Chaussemy, G., Laugier, A., and Guillot, G., Mat. Res. Symp. Proc. Vol. 144. 27 (1989)
8. Marrakchi, G., Barbier, D., Guillot, G. and Nouilhat, A., J. Appl. Phys. 62, 2742 (1987)
9. Marrakchi, G., Unpublished
10. Singh, R., J. Appl. Phys. 63, 59, (1988)
11. Brunod, P., Thèse de Doctorat CENG, Leti Grenoble (France) 1989
12. Fornari, R., Gombia, E. and Mosca, R., J. Elec. Mat. I 8, 151 (1989)
13. Marrakchi, G., Kalboussi, A., Brémond, G., Guillot, G., Alaya, S., Maaref, H. and Fornari, R., to be published in J. Appl. Phys. (1991)
14. Marrakchi, G., Kalboussi, A., Guillot, G., Alaya, S., Maaref, H. and Fornari, R., European Mat. res. soc. proc (ICAM) Strasblourg 1991
15. Yu, P. W. and Reynolds, D.C., J. Appl. Phys. 53., 1236 (1982)

Deep Donor and Acceptor Levels Induced by High Temperature and long time Annealing in LEC Gallium Arsenide

  • G. Marrakchi (a1), A. Kalboussi (a1), G. Guillot (a1), M. Ben Salem (a2), H. Maaref (a2) and E. Molva (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed