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Deep Donor and Acceptor Levels Induced by High Temperature and long time Annealing in LEC Gallium Arsenide

Published online by Cambridge University Press:  26 February 2011

G. Marrakchi ,
A. Kalboussi ,
G. Guillot ,
M. Ben Salem ,
H. Maaref  and
E. Molva
G. Marrakchi
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) INSA de Lyon, 20 avenue Albert Einstein, 69621 Villeurbanne Cedex, France.
A. Kalboussi
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) INSA de Lyon, 20 avenue Albert Einstein, 69621 Villeurbanne Cedex, France.
G. Guillot
Affiliation:
Laboratoire de Physique de la Matière (URA CNRS 358) INSA de Lyon, 20 avenue Albert Einstein, 69621 Villeurbanne Cedex, France.
M. Ben Salem
Affiliation:
Département de Physique, Faculté des Sciences, 5000 Monastir, Tunisie.
H. Maaref
Affiliation:
Département de Physique, Faculté des Sciences, 5000 Monastir, Tunisie.
E. Molva
Affiliation:
LETI, a Division of commissariat à 1'énergie atomique, CENG-85X-38041 Grenoble cedex., France.
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Abstract

The effects of high temperature isothermal annealing on the electrical properties of donor and acceptor defects in n-type LEC GaAs are investigated. The annealing experiments are performed under As-rich atmosphere at 1000°C for 1–4 and 16 hours followed by a very quick quenching into cold water of the quartz ampoules containing the samples. The donor and acceptor levels are detected respectively by standard (DLTS) and optical (ODLTS) deep level spectroscopy. DLTS results show the presence of one single donor level present in unannealed and annealed samples at Ec - 0.79eV which is identified as the well known electron trap EL2 Only the sample annealed for 16 hs exhibits the presence of a new electron trap named TAI at Ec - 0.32eV. The appearance of TAI is correlated in one hand with the evolution of EL2 concentration and in the other hand to the effect of long duration (16 hs) of the treatment. For acceptor levels, two hole traps HT1 and HT2 are detected respectively at EV + 0.18 eV and EV+ 0.28 eV. HT1 is detected only in samples annealed for 4 and 16 hs and HT2 is detected in all studied samples. Photoluminescence (PL) measurements show the presence of the 1.44 eV band corresponding to gallium antisite GaAs defect. This band observed in unannealed and annealed samples shows that GaAs remains stable even after thermal annealing at lOOO°C for 16 hs and it is correlated with the presence of HT2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 859
Copyright
Copyright © Materials Research Society 1992

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References

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