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Deep Defects in Fe-Doped GaN Layers Analysed by Electrical and Photoelectrical Spectroscopic Methods

Published online by Cambridge University Press:  01 February 2011

H. Witte ,
K. Fluegge ,
A. Dadgar ,
A. Krtschil ,
A. Krost  and
J. Christen
H. Witte
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, D-39016 Magdeburg, Germany
K. Fluegge
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, D-39016 Magdeburg, Germany
A. Dadgar
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, D-39016 Magdeburg, Germany
A. Krtschil
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, D-39016 Magdeburg, Germany
A. Krost
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, D-39016 Magdeburg, Germany
J. Christen
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, D-39016 Magdeburg, Germany
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Abstract

The electrical activity of iron in Fe- doped, and in Si and Mg co-doped GaN layers grown on sapphire substrates by metal organic vapor phase epitaxy was studied as shown by temperature dependent Hall Effect (TDH) measurements. In all samples iron doping generates an acceptor defect, which compensates donors in n-type GaN. Furthermore, iron doping causes strong potential inhomogeneities, which decrease the Hall mobility in the layers. To verify, if iron creates only hole traps, defects in n-type Si:Fe and Fe doped samples were investigated. The well known dominant electron traps in n-type GaN at 520 – 550 meV and 480 meV were found by deep level transient spectroscopy and thermal admittance spectroscopy, respectively. A high Fe-doped GaN layer shows a low p-type conductivity dominated by the iron acceptor. An activation energy of EV+ 460 meV was determined by TDH indicating, that the iron acceptor correlates with this defect level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.37
Copyright
Copyright © Materials Research Society 2004

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References

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