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The Decomposition Chemistry of an AlN Precursor Bis-Dimethylaluminum Deutero-Amide, [(CH3)2AlND2]3, as Revealed by Time-of-Flight Molecular beam mass Spectrometry

Published online by Cambridge University Press:  22 February 2011

Carmela C. Amato ,
John B. Hudson  and
Leonard V. Interrante
Carmela C. Amato
Affiliation:
Chemistry DepL, Rensselaer Polytechnic Institute, Troy, NY 12180
John B. Hudson
Affiliation:
Materials Engineering Dept, Rensselaer Polytechnic Institute, Troy, NY 12180
Leonard V. Interrante
Affiliation:
Chemistry DepL, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

A molecular beam mass spectrometer coupled to the inlet portion of a hot-wall CVD reactor has been used to measure the time-of-flight (TOF) distribution of molecules sampled from the reactor. The molecular weights of the species in the reactor can be determined from test TOF distributions. This technique has been used to identify the gas phasespecies present in a hot-wall reactor during the CVD of A1N using bis-dimethylaluminum deutero-amide,[(CH3)2AlND2]3 (I), as the precursor. Evidence has been found for: deuterated methane, CH3D, trimeric form of the precursor I, and its dimeric form. TOF evidence also supports the presence of an oligomer of I with a pentameric structure, as well as a number of substituted versions of trimer and dimer. Mechanisms have been formulated that explain methane elimination from the precursor as well as the formation of all species observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 611
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Interrante, L.V., Lee, W., McConnell, M., Lewis, N., and Hall, E., J. Electrochem. Soc. 132 (1989) 472.Google Scholar
[2] Amato, C.C., Hudson, J.B., and Interrante, L.V., in: Chemical Vapor Deposition of Refractory Metals and Ceramics, Mater. Res. Soc. Symp. Proa, Vol. 168, Eds. Besmann, T. and Gallois, B.M (Materials Research Society, Pittsburgh, PA, 1990) 119.Google Scholar
[3] Amato, C.C., Hudson, J.B., and Interrante, L.V., Appl. Surf. Sci. 54 (1992) 18.Google Scholar
[4] Sauls, F.C., Interrante, L.V., and Jiang, Z., Inorg. Chem. 29 (1990) 2989.Google Scholar