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Deactivation of Ultra Shallow B and BF2 Profiles After Non-melt Laser Annealing

  • Jim Sharp (a1), Nicholas E.B Cowern (a2), Roger P. Webb (a3), Damiano Giubertoni (a4), Salvotore Gennaro (a5), Massimo Bersani (a6), Majeed A. Foad (a7) and Karen J. Kirkby (a8)...

Abstract

Ultra-shallow B and BF2 implants in silicon pre-amorphised with Ge have been activated using a scanning non-melt laser. The implants were activated either by using 1 or 10 laser scans. Isochronal 60s post-laser annealing between 700-1000°C were then undertaken to study the deactivation and reactivation of the B. Both B and BF2 samples were implanted with a dose of 1x1015 B cm-2 at an effective energy of 500eV. The presence of F from the BF2 implants, which is superimposed over the boron profile increases the sheet resistance of the initial fabricated junction (from 600-700 Ω/sq from B implants only to 750-1100 Ω/sq for BF2 implants). Fluorine also changes the deactivation and reactivation behaviour of the boron during the post-anneals by increasing the amount of deactivation of the boron.

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Keywords

Deactivation of Ultra Shallow B and BF2 Profiles After Non-melt Laser Annealing

  • Jim Sharp (a1), Nicholas E.B Cowern (a2), Roger P. Webb (a3), Damiano Giubertoni (a4), Salvotore Gennaro (a5), Massimo Bersani (a6), Majeed A. Foad (a7) and Karen J. Kirkby (a8)...

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