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DCD and Low T Pl Determination of Bandgap Dependence on Composition for Mocvd Grown InGaAs/InP

  • I. C. Bassignana (a1), C. J. Miner (a1) and N. Puetz (a1)

Abstract

This work reports a detailed study of the bound exciton recombination energy measured by low temperature (7K) photoluminescence, as a function of the relative lattice mismatch between the InGaAs epitaxial layers and the substrate measured by double crystal x-ray diffraction. Nominally undoped lμm and 2μm epitaxial layers of InGaAs/InP were grown by metal organic chemical vapor deposition (MOCVD). All InGaAs epitaxial layers used in this study show a single narrow rocking curve peak (FWHM < 25 arc-sec) and only a single narrow PL peak (FWHM < 2.5 meV). Near lattice match the PL energy varies linearly with the mismatch but the absolute value of the PL energy at lattice match is a function of the type of substrate used.

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DCD and Low T Pl Determination of Bandgap Dependence on Composition for Mocvd Grown InGaAs/InP

  • I. C. Bassignana (a1), C. J. Miner (a1) and N. Puetz (a1)

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