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Dangling-Bond Relaxation and Metastability in P-Type Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

Richard S. Crandall ,
Martin W. Carlen ,
Klaus Lips  and
Yueqin Xu
Richard S. Crandall
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401
Martin W. Carlen
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401
Klaus Lips
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401
Yueqin Xu
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401
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Abstract

We discuss the subtle effects involved in observing slow dangling bond relaxation by studying capacitance transients in p-type hydrogenated amorphous silicon (a-Si:H). The data suggest that neutral dangling bonds are reversibly converted into metastable positive charged dangling bonds by hole trapping. These metastable positive dangling bonds reconvert to neutral dangling bonds upon annealing at elevated temperature. The annealing kinetics for this process are the same as those observed for annealing of quenched in conductivity changes in p-type a-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 227
Copyright
Copyright © Materials Research Society 1995

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References

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