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Damage Related Defect Levels in Oxygen Implanted GaAs and InP

Published online by Cambridge University Press:  26 February 2011

L. He  and
W. A. Anderson
L. He
Affiliation:
State University of New York at Buffalo, Center for Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, 217 Bonner Hall, Amtierst, NY 14260
W. A. Anderson
Affiliation:
State University of New York at Buffalo, Center for Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, 217 Bonner Hall, Amtierst, NY 14260
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Abstract

Oxygen ion-implantation can be used to create high resistivity regions in GaAs and InP. We have studied the low dose oxygen implantation in GaAs and InP by photoreflectance spectroscopy (PR), deep level transient spectroscopy (DLTS) and current-voltage (I-V) characteristics. Rapid thermal annealing (RTA) treatments were carried out at different temperatures after implantation to study the annealing temperature effect. The surface disturbance by implantation was studied by PR. Free carrier compensation was observed in every implanted sample and gave improved I-V properties. By DLTS tests, one electron trap with Ea = Ec-0.15eV and a hole trap with Ea = Ev + 0.76eV in the starting GaAs wafer disappeared after O+ implantation due to carrier compensation. In undoped InP, three new electron traps with Ea = Ec-0.47eV, 0.28eV and O.lleV were created after O+ implantation which are believed to be damage related. The comparison of the results from undoped and n-type doped InP indicated that the carrier compensation effect is substrate doping dependent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 847
Copyright
Copyright © Materials Research Society 1992

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References

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