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Cyan electroluminescence from n-ZnO/i-CdZnO/p-Si heterojunction diodes

  • Lin Li (a1), Zheng Yang (a2) and Jianlin Liu (a3)

Abstract

n-ZnO/i-CdZnO thin film was grown on p-type Si substrate by plasma-assisted molecular-beam epitaxy (MBE). Rectifying I-V curves show typical diode characteristics. Cyan electroluminescence emissions at around 473 nm were observed when the diodes were forward-biased at room temperature. The emission intensity increases with the increase of the injection current. Room temperature photoluminescence verifies the electroluminescence emissions come from CdZnO layer.

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Keywords

Cyan electroluminescence from n-ZnO/i-CdZnO/p-Si heterojunction diodes

  • Lin Li (a1), Zheng Yang (a2) and Jianlin Liu (a3)

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