Hostname: page-component-77c89778f8-9q27g Total loading time: 0 Render date: 2024-07-25T02:09:48.086Z Has data issue: false hasContentIssue false
  • English
  • Français

Cw Laser Annealing of Ion Implanted Oxidized Silicon Layers on Sapphire

Published online by Cambridge University Press:  15 February 2011

G. Alestig ,
G. HolmÉn  and
S. Peterström
G. Alestig
Affiliation:
Department of Physics, Chalmers University of Technology, S-412 96 Göteborg, Sweden
G. HolmÉn
Affiliation:
Department of Physics, Chalmers University of Technology, S-412 96 Göteborg, Sweden
S. Peterström
Affiliation:
Department of Physics, Chalmers University of Technology, S-412 96 Göteborg, Sweden
Get access

Abstract

CW laser annealing has been performed on silicon on sapphire (SOS) implanted with boron or phosphorus ions to a dose of 1015 ions/cm2 . The laser irradiation was done both with and without an oxide layer on top of the silicon and from both the silicon and the sapphire side. Sheet resistivity and Hall effect measurements were used for the analysis of the samples. Good annealing and high activation of the dopants were obtained for both oxidized and unoxidized SOS. For samples irradiated from the silicon side, the needed laser power changed depending on the thickness of the oxide. For samples irradiated from the sapphire side, the needed laser power was independent of oxide thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 517
Copyright
Copyright © Materials Research Society 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. See, for example, Laser and Electron-Beam Solid Interactions and Materials Processing, Gibbons, J.F., Hess, L.D., and Sigmon, T.W., eds. (North Holland, New York, 1981).Google Scholar
2. 7Roulet, M.E., Schwob, P., Affolter, K., Lüthy, W., von Allmen, M., Fallavier, M., Mackowski, J.M., Nicolet, M.A., and Thomas, J.P., J. Appl. Phys. 50, 5536 (1979)Google Scholar
3.Lüthy, W., Affolter, K., Weber, H.P., Roulet, M.E., Fallavier, M., Thomas, J.P., and Mackowski, J., Appl. Phys. Lett. 35, 673 (1979).Google Scholar
4.Golecki, I., Kinoshita, G., and Paine, B.M., Nucl. Instr. and Meth. 182/183, 675 (1981).Google Scholar
5.Lasers in Industry, Charschan, S.S., ed. (Van Nostrand, New York 1972).Google Scholar
6.Smits, F.M., Bell System Tech. J. 37, 711 (1958).Google Scholar
7.van der Pauw, L.J., Philips Res. Repts. 13, 1 (1958).Google Scholar
8.Williams, J.S., Brown, W.L., Leamy, H.J., Poate, J.M., Rodgers, J.W., Rousseau, D., Rozgonyi, G.A., Schelnutt, J.A., and Sheng, T.T., Appl. Phys. Lett. 33, 542 (1978).Google Scholar
9.Okabayashi, H., Yoshida, M., Ishida, K., and Yamane, T., Appl. Phys. Lett. 36, 202 (1980).Google Scholar
10.Teng, T.C., Shiau, Y., Chen., Y.S., Skinner, C., Peng, J.D., and Palkuti, L.J., in Laser and Electron-Beam Solid Interactions and Materials Processing, p. 391. Gibbons, J.F., Hess, L.D., and Sigmon, T.W., eds. (North Holland, New York, 1981).Google Scholar
11.Fowles, G.R., Introduction to Modern Optics (Holt, Rinehart and Winston, New York, 1968).Google Scholar
12.Handbook of Optics, Discroll, W.G. and Vaughan, W., eds. (McGraw-Hill, New York, 1978).Google Scholar
13.Smith, T. and Carlan, A.J., J. Appl. Phys. 43, 2455 (1972).Google Scholar
14.Motooka, T. and Watanabe, K., J. Appl. Phys. 51, 4125 (1980).Google Scholar
15.Auston, D.H., Golovchenko, J.A., Smith, P.R., Surko, C.M., and Venkatesan, T.N.C., Appl. Phys. Lett. 33, 539 (1978).Google Scholar
16.Gibbons, J.F., Johnson, W.S., Mylroie, S.W., Projected Range Statistics (Halsted Press, New York, 1975).Google Scholar
17.Irvin, J.C., Bell System Tech, J. 41, 387 (1962).Google Scholar
18.Johansson, N.G.E., Mayer, J.W., and Marsh, O.J., Solid State Electronics, 13, 317 (1970).Google Scholar