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CW Annealing Techniques for Junction Formation in Ge

Published online by Cambridge University Press:  15 February 2011

J.P. Lorenzo ,
K. J. Soda  and
D. Eirug Davies
J.P. Lorenzo
Affiliation:
Rome Air Development Center, Hanscom AFB, MA 01731
K. J. Soda
Affiliation:
Rome Air Development Center, Hanscom AFB, MA 01731
D. Eirug Davies
Affiliation:
Rome Air Development Center, Hanscom AFB, MA 01731
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Abstract

CW scanned Argon laser annealing is used to form photo diodes in single crystal Boron implanted germanium. The starting material is doped n–type to 4 × 1015 cm−3 and oriented 2° off the <100>. For annealing, a substrate temperature of 250°C is employed in conjunction with a beam spot diameter of 50 μm and scan speeds in the vicinity of 1 cm/sec. Pyrolytic oxides are deposited to provide a protective and antireflective coating. Devices are fabricated and display dark leakage characteristics of the order of ∼ 10−4 A/cm2 which is comparable to diodes made by more conventional techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 627
Copyright
Copyright © Materials Research Society 1982

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References

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