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CVD of SiC and AlN Using Cyclic Organometallic Precursors

Published online by Cambridge University Press:  15 February 2011

L. V. Interrante ,
D. J. Larkin  and
C. Amato
L. V. Interrante
Affiliation:
Department of Chemistry, Rensselaer Polytechnic Institute, Troy, New York 12180-3590
D. J. Larkin
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
C. Amato
Affiliation:
Department of Chemistry, Rensselaer Polytechnic Institute, Troy, New York 12180-3590
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Abstract

The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on SiC and AlN deposition, with particular focus on SiC. Molecules containing (SiC)2 and (AlN)3 rings as the “core structure” were employed as the source materials for these studies. The organoaluminum amide, [Me2AlNH2]3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes, [Si(XX′)CH2]2 (with X and X′ - H, CH3 , and CH2 SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, [SiH2 CH2]2, was found to exhibit the lowest deposition temperature (ca. 670 °C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates (70% with a SiC<lll> orientation).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 250: Symposium R – Chemical Vapor Deposition of Refractory Metals and Ceramics II , 1991 , 283
Copyright
Copyright © Materials Research Society 1992

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