Skip to main content Accessibility help
×
Home

CVD and Characterization of Al-Cu Metallization Thin Films

  • V. H. Houlding (a1), H. Maxwell (a1), S. M. Crochiere (a1), D. L. Farrington (a1), R. S. Rai (a1) and J. M. Tartaglia (a1)...

Abstract

The chemical vapor deposition of Al-Cu thin films on Si, SiO2, and TiN substrates was examined in a vertical low pressure cold wall reactor using trimethylamine alane (TMAA1) at 20 C as the Al source. The Cu sources bis-(hexafluoroacetylacetonato)copper(H)(CuHFA), (cyclopentadienyl)copper(I) triethylphosphine (CpCuPEt3), and (hexafluoroacetylacetonato)copper(I) trimethylphosphine (HfaCuPMe3), were compared. The Cu content of the films was controlled up to“5 wt% by simply varying the temperature of the Cu source. Codeposited Al-Cu films with excellent conductivity, purity, and adhesion properties were obtained with all Cu sources. Optimal film smoothness was achieved at∼350 C. The compounds differed in the ease of control over the %Cu in the films. CuHFA exhibited a massive parasitic reaction which made control very difficult. The Cu(I) complexes showed very minor parasitic reactions. Analysis of films with high Cu content by SEM-EDS showed clear segregation of Cu and Al, consistent with the low solubility of Cu in Al. Films with >2% Cu appeared homogeneous on a μm scale by both SEM-EDS and SIMS depth profiling. TEM of film cross sections revealed a polycrystalline Al film with small (20–100 Å) Cu-rich particles dispersed throughout the Al grains. These particles exhibited bright field-dark field contrast characteristic of crystalline material.

Copyright

References

Hide All
1) Houlding, V. H. and Coons, D. E., in Tunpsten and Other Advanced Metals for ULSI Applications 1990, edited by Smith, G. C. and Blumenthal, R. (Mater. Res. Soc, Pittsburgh, 1990), pp. 203208.
2) a. VanHemert, R. L., Spendlove, L. B., and Sievers, R. E., J. ElectroChem. Soc, 112, 1123 (1965).
b. Temple, R. and Reisman, A., J. ElectroChem. Soc, 136, 3525 (1989).
c. Kaloyeros, A. E., Feng, A., Garhart, J., Brooks, K. C., Ghosh, S. K., Saxena, A. N., and Luehrs, F., J. Elect. Mater, 19, 271 (1990).
3) a. Dupuy, C. G., Beach, D. B., Hurst, J. E. Jr, and Jasinski, J. M., Chem. Mater, 1, 16 (1989).
b. Beach, D. B., LeGoues, F. K., and Hu, C. -K., Chem. Mater, 2, 216219 (1990).
Hampden-Smith, C. M. J., Kodas, T. T., Paffett, M., Farr, J. D., and Shin, H. -K., Chem. Mater, 2, 636 (1990).
4) a. Shin, H. -K., Chi, K. -M., Hampden-Smith, M. J., Kodas, T. T., Farr, J. D., and Paffett, M., Mat. Res. Soc. Symp. Proc, 204, 421 (1991).
b. Shin, H. -K., Chi, K. -M., Hampden-Smith, M. J., Kodas, T. T., Farr, J. D., and Paffett, M., Adv. Mater, 3, 246 (1991).
5) Ruff, J. K., Inorg. Synth, 9, 30 (1967).
6) Cotton, F. A. and Marks, T. J., J. Am. Chem. Soc, 92, 51145117 (1970).
7) Fraser, G. W., Greenwood, N. N., and Straughan, B. P., J. Chem. Soc, 1963, 37423746 (1963).
8) Metals Handbook. 8th ed., vol. 8, (American Society for Metals, Mearls Park, OH, 1973), p 259.
9) a. Mader, S. and Herd, S., Thin Solid Films 10, 377 (1972).
b. Walker, G. A. and Goldsmith, C. C., J. Appl. Phys, 44, 2452 (1973).
Agarwala, C. B. N., Berenbaum, L., and Peressini, P., J. Electronic Mater, 3, 137(1974).
10) Ogawa, S. and Nishimura, H., Proc. Intl. Electron. Devices Mtg.-91, December, 1991, (IEEE, 1991), pp. 277280.
11) d'Heurle, F. M. and Ho, P. S., in Thin Films - Interdiffusion and Reactions, edited by Poate, J. M., Tu, K. N., and Mayer, J. W., (Wiley Interscience, New York NY 1978), pp. 243304.

CVD and Characterization of Al-Cu Metallization Thin Films

  • V. H. Houlding (a1), H. Maxwell (a1), S. M. Crochiere (a1), D. L. Farrington (a1), R. S. Rai (a1) and J. M. Tartaglia (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed