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Curvature and strain in thick HVPE-GaN for quasi-substrate applications

Published online by Cambridge University Press:  01 February 2011

Claudia Roder ,
Tim Böttcher ,
Tanya Paskova ,
Bo Monemar  and
Detlef Hommel
Claudia Roder
Affiliation:
University of Bremen, Institute of Solid State Physics Otto-Hahn Allee, 28359 Bremen, Germany
Tim Böttcher
Affiliation:
University of Bremen, Institute of Solid State Physics Otto-Hahn Allee, 28359 Bremen, Germany
Tanya Paskova
Affiliation:
Linkoeping University, Department of Physics and Measurement Technology 581 83 Linkoeping, Sweden
Bo Monemar
Affiliation:
Linkoeping University, Department of Physics and Measurement Technology 581 83 Linkoeping, Sweden
Detlef Hommel
Affiliation:
University of Bremen, Institute of Solid State Physics Otto-Hahn Allee, 28359 Bremen, Germany
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Abstract

Uncracked HVPE-GaN layers of different thicknesses were investigated using high resolution x-ray diffraction at variable temperatures. The absolute lattice parameters as well as the wafer curvature were measured simultaneously at different temperatures. All samples were found to be under biaxial tension at growth temperature. At room temperature the GaN film is under biaxial compression while the substrate is tensile strained. A simulation of the stress and curvature of the heterostructures was performed for different thicknesses of the films and substrates and a good agreement was found with the experimentally determined values.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y2.11
Copyright
Copyright © Materials Research Society 2004

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References

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