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Current-Voltage Characteristics-What Do Experiments Really Tell Us?

Published online by Cambridge University Press:  25 February 2011

Finley R. Shapiro  and
Marvin Silver
Finley R. Shapiro
Affiliation:
Department of Electrical and Computer Engineering, Drexel University, Philadelphia, Pa. 19104
Marvin Silver
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, N.C. 27599-3255.
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Abstract

Experimentally measured current-voltage measurements in amorphous silicon hydride pin diodes have been fit to computer simulations by Hack and den Boer [1] using relatively small values for the neutral and charged trap capture rates. Silver and Cannella [2] have proposed larger values for the capture rates, accompanied by larger electron and hole band mobilities. We discuss here the possible reasons for expecting the larger values for the capture rates, and their influence on current voltage measurements both with and without the higher mobilities. It is found that the simulated I-V results using only the larger capture rates are much smaller than those for Hack and den Boer's parameters. However, when the large values are used for both the capture rates and the mobilities, the I-V relationship is quite similar to that for the smaller capture rates and mobilities. We also show the differences in the simulated transient currents for the different sets of parameters, and we discuss the causes of these differences.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 351
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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