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Current Transport in W and WSIX Ohmic Contacts to Ingan and Inn

  • C. B. Vartuli (a1), S. J. Pearton (a1), C. R. Abernathy (a1), J. D. MacKenzie (a1), M. L. Lovejoy (a2), R. J. Shul (a2), J. C. Zolper (a2), A. G. Baca (a3), M. Hagerott-Crawford (a4), K. A. Jones (a5) and F. Ren (a6)...


The temperature dependence of the specific contact resistance of W and WSi0.44 contacts on n+ In0.55Ga0.35N and InN was measured in the range -50 °C to 125 °C. The results were compared to theoretical values for different conduction mechanisms, to further elucidate the conduction mechanism in these contact structures. The data indicates the conduction mechanism is field emission for these contact schemes for all but as-deposited metal to InN where thermionic emission appears to be the dominant mechanism. The contacts were found to produce low specific resistance ohmic contacts to InGaN at room temperature, ϱc ∼ 10-7 Ω ·cm2 for W and ϱc of 4× 10-7 Ω ·cm for WSix. InN metallized with W produced ohmic contacts with ϱc ∼ 10-6 Ω ·cm and ϱc ∼ 10-6 Ω ·cm. for WSix at room temperature.



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