Skip to main content Accessibility help
×
Home

Current Transport in W and WSIX Ohmic Contacts to Ingan and Inn

  • C. B. Vartuli (a1), S. J. Pearton (a1), C. R. Abernathy (a1), J. D. MacKenzie (a1), M. L. Lovejoy (a2), R. J. Shul (a2), J. C. Zolper (a2), A. G. Baca (a3), M. Hagerott-Crawford (a4), K. A. Jones (a5) and F. Ren (a6)...

Abstract

The temperature dependence of the specific contact resistance of W and WSi0.44 contacts on n+ In0.55Ga0.35N and InN was measured in the range -50 °C to 125 °C. The results were compared to theoretical values for different conduction mechanisms, to further elucidate the conduction mechanism in these contact structures. The data indicates the conduction mechanism is field emission for these contact schemes for all but as-deposited metal to InN where thermionic emission appears to be the dominant mechanism. The contacts were found to produce low specific resistance ohmic contacts to InGaN at room temperature, ϱc ∼ 10-7 Ω ·cm2 for W and ϱc of 4× 10-7 Ω ·cm for WSix. InN metallized with W produced ohmic contacts with ϱc ∼ 10-6 Ω ·cm and ϱc ∼ 10-6 Ω ·cm. for WSix at room temperature.

Copyright

References

Hide All
1. Foresi, J.S. and Moustakas, T.D., Appl. Phys. Lett. 62 2859 (1993).
2. Khan, M.A., Kuznia, T.N., Bhattaraia, A.R. and Oison, D.T., Appl. Phys. Lett. 62 1786 (1993).
3. Nakamura, S., Mukai, T. and Senoh, M., Jpn. J. Appl. Phys. 30 L1998 (1991).
4. Binari, S.C., Rowland, L.B., Kruppa, W., Kelner, G., Doverspike, K. and Gaskill, D.K., Electron. Lett. 30 1248 (1994).
5. Nakamura, S., Senoh, M. and Mukai, T., Appl. Phys. Lett. 62 2390 (1993).
6. Lin, M.E., Ma, Z., Huang, F.Y., Fan, Z.F., Allen, L.A. and Morkoc, H., Appl. Phys. Lett. 64 1003 (1994).
7. Cole, M.W., Eckart, D.W., Monahan, T., Pfeffer, R.L., Han, W.Y., Ren, F., Yuan, C., Stall, R.A., Pearton, S.J., Li, Y. and Lu, Y., J. Appl. Phys. 80 278 (1996).
8. Lin, M.E., Huang, F.Y. and Morkoc, H., Appl. Phys. Lett. 64 2557 (1994).
9. Ren, F., Abernathy, C.R., Chu, S.N.G., Lothian, J.R. and Pearton, S.J., Appl. Phys. Lett. 66 1503 (1995).
10. Ren, F., Abernathy, C.R., Pearton, S.J. and Wisk, P.W., Appl. Phys. Lett. 64 1508 (1994).
11. Ren, F., in GaN and Related Materials, ed. Pearton, S.J. (Gordon and Breach, NY 1996).
12. Abernathy, C.R., J. Vac. Sci. Technol. A 11 869 (1993).
13. Abernathy, C.R., Mat. Sci. Eng. Rep. 14, 203 (1995).
14. Shul, R.J., Rieger, D.J., Baca, A.G., Constantine, C. and Barratt, C, Electron. Lett. 30 85 (1994).
15. Shul, R.J., Sherwin, M.E., Baca, A.G. and Rieger, D.J., Electron. Lett. 32 70 (1996).
16. Shul, R.J., Kilcoyne, S.P., Hagerott-Crawford, M., Parmeter, J.E., Vartuli, C.B., Abernathy, C.R. and Pearton, S.J., Appl. Phys. Lett. 66 1761 (1995).
17. Yu, A.Y.C., Solid State Electron, 13, 239 (1970).
18. Smith, L.L. and Davis, R.F., in Properties of Group III Nitrides, ed. Edgar, J.H., EMIS Datareview (INSPEC, London 1994).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed