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Current Transport in Cryogenic Processed Metal/InP and GaAs Interfaces

Published online by Cambridge University Press:  25 February 2011

L. He ,
Z.Q. Shi  and
W.A. Anderson
L. He
Affiliation:
Northern Illinois University, Department of Electrical Engineering, DeKalb, IL
Z.Q. Shi
Affiliation:
Northern Illinois University, Department of Electrical Engineering, DeKalb, IL EMCORE Corp., Somerset, NJ
W.A. Anderson
Affiliation:
Northern Illinois University, Department of Electrical Engineering, DeKalb, IL State University of New York at Buffalo, Department of Electrical & Computer Engineering, Buffalo, NY
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Abstract

Schottky contacts to n type InP and GaAs have been made by deposition on substrates cooled to low temperature (LT=77K) in a vacuum close to 10-7 Torr.The Schottky barrier height, ФB, was found to be as high as 0.96eV with Pd/InP and 0.95eV for Au/GaAs. This indicated a significant increase in ФB compared with the room temperature (RT=300K) deposition. For diodes fabricated at room temperature, the reverse saturation current density, JO, decreased sharply with decrease in measuring temperature. For the RT InP diodes, the conduction mechanism was controlled by thermionic emission (TE). For the LT InP diodes, the value of JO was about six orders smaller than for the RT diode at the same temperature. As testing temperature decreased, the barrier height was increased from 0.96 to 1.15eV, with a temperature coefficient of -3.2 x 10-4 eV/K. The forward transport mechanism was controlled by thermionic field emission (TFE). For the GaAs diodes, thermionic emission (TE) dominated in the current transport at room temperature for both RT and LT diodes. At low testing temperature, RT diodes exhibited an excess current component at low forward bias.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 381
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Hokelek, E. and Robinson, G.Y., Solid State Elec. 24,99(1981).CrossRefGoogle Scholar
2 Brillson, L.J. and Brucker, C.F., J.Vac.Sci.Tech. 21, 564 (1982).CrossRefGoogle Scholar
3 Hokelek, E. and Robinson, G.Y., J.Appl.Phys. 54, 5199 (1983).CrossRefGoogle Scholar
4 Yamagish, H., Jap.J.Appl.Phys. 25, 1691 (1986).Google Scholar
5 Gann, R.G., Geib, K.M., Wilmsen, C.W., Costello, J., Hrychwain, G., and Zeto, RJ., J.Appl.Phys. 63, 506 (1988).Google Scholar
6 Lee, Y.S. and Anderson, W.A., J.Appl.Phys. 65, 4051 (1989)CrossRefGoogle Scholar
7 Shi, Z.Q. and Anderson, W.A., Solid State Elec. 34, 285 (1991).Google Scholar
8 Shi, Z.Q. and Anderson, W.A., Electronic, Optical and Device Properties of Layered Structures, (MRS, Pittsburgh, 1990), p. 91.Google Scholar
9 Shi, Z.Q., R.L, Wallace, and Anderson, W.A., Appl. Phys. Lett. 59, 446 (1991).CrossRefGoogle Scholar
10 Shi, and Anderson, W.A., J. Appl. Phys. 70, 3137 (1991).CrossRefGoogle Scholar
11 Sze, S.M., Physics of Semiconductor Devices, 2nd Ed. (Wiley, New York, 1981).Google Scholar
12 Padovani, F.A. and Stratton, R., Solid State Elec. 9, 695 (1966)CrossRefGoogle Scholar
13 Shi, Z.Q. and Anderson, W.A., Solid State Elect, 34, 285 (1991)Google Scholar