Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-19T13:16:15.111Z Has data issue: false hasContentIssue false

Current spreading in AlGaN:Mg cladding layers of laser structures

Published online by Cambridge University Press:  21 March 2011

Stephan Figge
Affiliation:
University of Bremen, Institute of Solid State Physics Kufsteiner Str., 28359 Bremen, Germany
Tim Böttcher
Affiliation:
University of Bremen, Institute of Solid State Physics Kufsteiner Str., 28359 Bremen, Germany
Christoph Zellweger
Affiliation:
Ecole Polytechnique Fédérale de Lausanne, Institut de micro- et optoélectronique EPFL, Lausanne Switzerland
Marc Ilegems
Affiliation:
Ecole Polytechnique Fédérale de Lausanne, Institut de micro- et optoélectronique EPFL, Lausanne Switzerland
Detlef Hommel
Affiliation:
University of Bremen, Institute of Solid State Physics Kufsteiner Str., 28359 Bremen, Germany
Get access

Abstract

The consequences of the anisotropic resistance in AlGaN/GaN strained layer superlattices for the operation of laser diodes were studied for structures driven in LED mode. A series of laser structures containing different Mg-doped AlGaN bulk and AlGaN/GaN strained layer superlattice cladding layers was compared to estimate the current spreading in the cladding due to the formation of 2D-hole gases. Current-voltage measurements revealed a significant spread of the current path in the superlattices, whereas no spreading was seen for the bulk cladding. In contrast to this, investigations of the electroluminescence showed no significant differences.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Einfeldt, S., Heinke, H., Kirchner, V. and Hommel, D., J. Appl. Phys. 89, 2163 (2001).Google Scholar
[2] Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., and Chocho, K., Appl. Phys. Lett. 72, 2014 (1998).Google Scholar
[3] Shur, M. S., Bykhovski, A. D., Gaska, R., Yang, J. W., Simin, G., and Khan, M. A.., Appl. Phys. Lett. 76, 3061 (2000)Google Scholar
[4] Xing, H., Proceedings of the 43rd Material Research Conference, Paper R9 (2001).Google Scholar
[5] Eliseev, P. G., Berlin, P., Lee, J., Appl. Phys. Lett. 71, 569 (1997).Google Scholar