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Current Issues and Future Trends in CMP Consumables for Oxide and Metal Polish

Published online by Cambridge University Press:  15 February 2011

M. Moinpour  and
A. Philipossian
M. Moinpour
Affiliation:
Intel Corporation, Santa Clara, CA 95052 USA
A. Philipossian
Affiliation:
Intel Corporation, Santa Clara, CA 95052 USA
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Introduction

The recent advent of Chemical Mechanical Planarization (CMP) as a major process technology has had a significant impact on the semiconductor industry. Oxide CMP is a technology enabler for logic and DRAM devices with feature sizes less than (or equal to) 0.75 micrometer [1]. Similarly, tungsten CMP has become a technology enabler for 0.35 micron devices [2,3], and current trends indicate that it will continue to play a major role in future generations of IC technologies [4,5]. CMP can also provide a technological advantage in front-end process modules such as Shallow Trench Isolation [6].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 243
Copyright
Copyright © Materials Research Society 1996

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References

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