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Current induced organization in thin nanocrystalline gold films during deposition

Published online by Cambridge University Press:  21 March 2011

P. Chaoguang
Affiliation:
Department of Materials Science, The Angstrom Laboratory, Uppsala University, P. O. Box 534, SE-75121, Uppsala, Sweden
J. Ederth
Affiliation:
Department of Materials Science, The Angstrom Laboratory, Uppsala University, P. O. Box 534, SE-75121, Uppsala, Sweden
L. B. Kish
Affiliation:
Department of Materials Science, The Angstrom Laboratory, Uppsala University, P. O. Box 534, SE-75121, Uppsala, Sweden
C. G. Granqvist
Affiliation:
Department of Materials Science, The Angstrom Laboratory, Uppsala University, P. O. Box 534, SE-75121, Uppsala, Sweden
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Abstract

Nanocrystalline gold films were prepared by advanced gas deposition. Electric field induced effects on the film structure during and after deposition was investigated. A dc electric field in the range 2 ≤Ua ≤ 8 V/cm, was applied parallel to the substrate surface and led to changes of film microstructure and resistivity. In another set of experiments, films deposited at Ua = 0 were exposed to electric fields of similar strength after deposition. Film degradation could be understood from a mechanism consistent with a biased-percolation effect. Our results show that it is possible to control the film structure by varying the strength of an applied electric field.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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