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Cu(In,Ga)Se2 Prepared from Electrodeposited CuGaSe2/CuInSe2 Bilayer for Solar Cell Applications

Published online by Cambridge University Press:  01 February 2011

Yusuke Oda ,
Takashi Minemoto ,
Hideyuki Takakura  and
Yoshihiro Hamakawa
Yusuke Oda
Affiliation:
ro002992@se.ritsumei.ac.jp, Ritsumeikan University, College of Science and Engineering, 1-1-1 Nojihigashi, Kusatsu, 525-8577, Japan, +81-77-561-4836, +81-77-561-4836
Takashi Minemoto
Affiliation:
minemoto@se.ritsumei.ac.jp, Ritsumeikan University, College of Science and Engineering, 1-1-1 Nojihigashi, Kusatsu, Shiga, 525-8577, Japan
Hideyuki Takakura
Affiliation:
takakura@se.ritsumei.ac.jp, Ritsumeikan University, College of Science and Engineering, 1-1-1 Nojihigashi, Kusatsu, Shiga, 525-8577, Japan
Yoshihiro Hamakawa
Affiliation:
hamakawa@se.ritsumei.ac.jp, Ritsumeikan University, College of Science and Engineering, 1-1-1 Nojihigashi, Kusatsu, Shiga, 525-8577, Japan
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Abstract

We report the preparation of Cu(In,Ga)Se2 (CIGS) thin-films using the electrodeposited (ED) CuGaSe2 (CGS)/CuInSe2 (CIS) bilayers. CGS/CIS bilayers were prepared on soda-lime glass /Mo substrates to realize the controlled Ga/(Ga+In) ratios and smooth layers of CIGS thin-films. It was found that the composition and morphology of CGS films was highly dependent on the composition of the bath. Crack-free and morphological CGS thin-films were obtained by the addition of supporting electrolyte and brightener. For the morphology and the crystallization of the ED-CIGS films, the best electric charges of CGS and CIS films were 1.0 C and 6.0 C respectively and the films were annealed at 600 oC for 60 min. However, the interface of the ED-CGS/CIS film had some voids and interdiffusions of Ga and In did not take place by annealing. The CIGS solar cell using ED-CGS/CIS films as an absorber exhibited diode behavior.

Keywords

electrodepositionabsorptionphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1012: Symposium Y – Thin-Film Compound Semiconductor Photovoltaics-2007 , 2007 , 1012-Y12-39
Copyright
Copyright © Materials Research Society 2007

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