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CuGaSe2-Based Solar Cells with High Open Circuit Voltage

Published online by Cambridge University Press:  01 February 2011

Raquel Caballero ,
Susanne Siebentritt ,
Christian A. Kaufmann ,
Carola Kelch ,
Daniel Schweigert ,
Thomas Unold ,
Marin Rusu ,
Hans-Werner Schock  and
Martha Ch Lux-Steiner
Raquel Caballero
Affiliation:
raquel.caballero@hmi.de, Hahn-Meitner-Institut, Technology, Glienicker Strasse 100, Berlin, N/A, Germany, 0049 3080623241, 0049 3080623173
Susanne Siebentritt
Affiliation:
siebentritt@hmi.de, Hahn-Meitner-Institut Berlin GmbH, Heterogeneous Material Systems, Glienicker Strasse 100, Berlin, 14109, Germany
Christian A. Kaufmann
Affiliation:
kaufmann@hmi.de, Hahn-Meitner-Institut Berlin GmbH, Technology, Glienicker Strasse 100, Berlin, 14109, Germany
Carola Kelch
Affiliation:
kelch@hmi.de, Hahn-Meitner-Institut Berlin GmbH, Heterogeneous Material Systems, Glienicker Strasse 100, Berlin, 14109, Germany
Daniel Schweigert
Affiliation:
daniel.schweigert@hmi.de, Hahn-Meitner-Institut Berlin GmbH, Technology, Glienicker Strasse 100, Berlin, 14109, Germany
Thomas Unold
Affiliation:
unold@hmi.de, Hahn-Meitner-Institut Berlin GmbH, Technology, Glienicker Strasse 100, Berlin, 14109, Germany
Marin Rusu
Affiliation:
rusu@hmi.de, Hahn-Meitner-Institut Berlin GmbH, Heterogeneous Material Systems, Glienicker Strasse 100, Berlin, 14109, Germany
Hans-Werner Schock
Affiliation:
hans-werner.schock@hmi.de, Hahn-Meitner-Institut Berlin GmbH, Technology, Glienicker Strasse 100, Berlin, 14109, Germany
Martha Ch Lux-Steiner
Affiliation:
lux-steiner@hmi.de, Hahn-Meitner-Institut Berlin GmbH, Heterogeneous Material Systems, Glienicker Strasse 100, Berlin, 14109, Germany
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Abstract

The objective of this work is to increase the open circuit voltage of CuGaSe2(CGS)-based solar cells without decreasing their efficiency. For that, the interface between the p-type CGS absorber and the n-type CdS/ZnO window layer is compared using three different recipes for the growth of the buffer layer. Results show the importance of the adaptation of the CdS buffer layer to the CuGaSe2 absorber film. A maximum open circuit voltage of 922 mV is achieved for the devices when using 60ºC as the chemical bath temperature and a low thiourea concentration. Drive-level capacitance profiling, external quantum efficiency and temperature dependent current-voltage measurements reveal a better quality of the CdS/CuGaSe2 interface for this buffer layer deposition conditions. Factors such as the larger depletion region width and the lower doping level, reducing the tunnelling component, are pointed out as responsible of the higher Voc.

Keywords

photovoltaicphysical vapor deposition (PVD)devices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1012: Symposium Y – Thin-Film Compound Semiconductor Photovoltaics-2007 , 2007 , 1012-Y12-38
Copyright
Copyright © Materials Research Society 2007

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