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Cu-doped ZnSe Film with Stoichiometric Composition Deposited at Room Temperature using Compound Sources

  • Masahiro Orita (a1), Takashi Narushima (a2) and Hiroaki Yanagita (a3)

Abstract

Stoichiometric Cu-doped ZnSe crystalline films were prepared on glass substrates from ZnSe and Cu2Se powders using the evaporation method without intentional heating. Post-annealing treatment at 400°C in a vacuum improved the crystallinity, and no secondary phase was observed using X-ray diffraction for a film with a Cu concentration of Cu/(Zn + Cu) = 0.10, which had a conductivity of 28 Scm-1 and good transparency at green and red wavelengths. The thermal probe test indicated p-type carrier polarity, and the effects of annealing were confirmed by irradiating the as-deposited films with a YAG laser (ë = 355 nm). Possibility of producing transparent p-type conducting films on polymer substrates is demonstrated.

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Cu-doped ZnSe Film with Stoichiometric Composition Deposited at Room Temperature using Compound Sources

  • Masahiro Orita (a1), Takashi Narushima (a2) and Hiroaki Yanagita (a3)

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