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The Crystallographic Theory of Dislocations in Interfaces

  • R.C. Pond (a1)

Abstract

The crystallographic theory of interfacial dislocations is outlined, and shown to encompass the case of defects in single crystals. It is demonstrated that four distinctive types of dislocations can arise in interfaces. Defects in two of these categories arise ubiquitously and have been studied extensively in the past, but defects in the remaining categories have only been observed relatively recently. The significance of these latter defects is assessed by discussing the type of interfaces in which they can occur, and their possible contribution to static and dynamic interfacial properties. Specific examples of their roles in accommodating misfit in epitaxial interfaces, and shuffle-less twinning in hcp metals are discussed.

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