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Crystallographic Aspects of Low Energy Boron Implantation Into Silicon

Published online by Cambridge University Press:  26 February 2011

R. F. Lever  and
K. W. Brannon
R. F. Lever
Affiliation:
IBM East Fishkill Facility, Hopewell Junction, NY 12533
K. W. Brannon
Affiliation:
IBM East Fishkill Facility, Hopewell Junction, NY 12533
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Abstract

The computer program MARLOWE has been used to investigate low energy boron implantation into silicon. When implanted in a “random” direction at 5 keV, the most deeply penetrating ions are seen to have spent an appreciable part of their path travelling in <001>, <011> or <112> axial directions or in {111} or {220} planar channels. Channeling was then investigated more directly by observing the mean path travelled by the ions in the direction of incidence as a function of both azimuthal and tilt angles between the direction of incidence and the 001 direction. At 5 keV, {111} planar channeling and <110>, <112>, <111> and <100> axial channeling is prominent, with {220} planar and <310> and <114> axial channeling observed to a lesser degree. Higher order planar channeling such as {400}, {331}, {422} or (511} was not observed at 5 keV. At 0.75 keV only <110>. <100> and <112> axial channeling and {111} planar channeling remained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 249
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Ziegler, J.F. and Lever, R.F., Appl. Phys. Lett. 46, 358 (1985).CrossRefGoogle Scholar
2. Cho, K., Allen, W.R., Finstad, T.G., Chu, W.K., Liu, I. and Wortmann, J.J., Nucl. Instr. and Meth. B7 , 265 (1995)Google Scholar
3. Robinson, M.T. and Torrens, I.M., Phys. Rev. B9 , 5008 (1974).CrossRefGoogle Scholar
4. Robinson, M.T., Phys. Rev. B27 , 5347 (1993).Google Scholar
5. Robinson, M.T. and Oen, O.S., Appl. Phys. Lett., 2 , 30 (1963).CrossRefGoogle Scholar
6. Brannon, K.W. and Lever, R.F., Electrochemical Society Fall Meeting, San Diego 1986 Google Scholar
7. Michel, A.E., Kastl, R.H., Mader, S.R., Masters, B.J. and Gardner, J.A., Appl. Phys. Lett. 44 , 404 (1984).CrossRefGoogle Scholar
8. Gemmell, D.S., Rev. Mod. Phys. 46, 129 (1974).CrossRefGoogle Scholar