We prepared a viscous Ni solution by dissolving NiCl2 in 1N HCl and mixing it with propylene glycol to control the amount of Ni on Si surface. A uniform film was formed after spin coating and oven dry. The a-Si films deposited by LPCVD with Si2H6 gas were crystallized more uniformly and more reproducibly. And the crystallization was enhanced from 600°C, 30h to 500°C, 10h. The surface roughness of poly-Si film crystallized with the viscous solution was much smaller than that of poly-Si film crystallized from Ni/Si direct contact. The TFT mobility was improved even though the crystallization temperature was much lower.