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Crystallization Dynamics Of Ferroelectric Pzt (52/48) Thin Film Prepared By Reactive Cosputtering On Pt On Si(100)

Published online by Cambridge University Press:  15 February 2011

Woong Kil Choo ,
Hyo Jin Kim ,
Kwang Young Kim  and
Sung Tae Kim
Woong Kil Choo
Affiliation:
Korea Advanced Institute of Science and Technology, Department of Electronic Materials Engineerig, Taejon 305–701, Korea
Hyo Jin Kim
Affiliation:
Korea Advanced Institute of Science and Technology, Applied Science Research Institute, Taejon 305–701, Korea
Kwang Young Kim
Affiliation:
Gold Star Co., Inc., Central Research Laboratories, Lab 2, Seoul 137–140, Korea
Sung Tae Kim
Affiliation:
Gold Star Co., Inc., Central Research Laboratories, Lab 2, Seoul 137–140, Korea
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Abstract

The crystallization process and microstructural evolution of PZT (52/48) thin films deposited on Pt thin film electrode on Si (100) by reactive multitarget cosputtering technique have been studied as a function of post-annealing temperature and holding time. As annealing temperature increases, the Amorphous PZT films as-deposited at low substrate temperature of 200 °C crystallize into pyrochlore at 450 °C and ferroelectric perovskite phase with pseudo-cubic structure at 550 °C in sequence. X-ray diffraction data show crystallization into perovskite phase to be complete in 30 Minutes at 550 °C. Furthermore, the change of PZT/Pt/Ti/SiO2/Si interfacial TEM Morphology during heat-treatment has been closely scrutinized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 597
Copyright
Copyright © Materials Research Society 1994

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References

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