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Crystallization Behaviour of Amorphous Si0.5Ge0.5 Films Observed by Positron Annihilation

Published online by Cambridge University Press:  21 February 2011

F. Edelman ,
F. Börner ,
R. Krause-Rehrberg ,
P. Werner ,
R. Weil ,
W. Beyer  and
R. Butz
F. Edelman
Affiliation:
Materials Engng. Faculty, Technical University of Darmstadt, 64287 Darmstadt, Germany
F. Börner
Affiliation:
Martin-Luther-Universität Halle-Wittenberg, Fachbereich Physik, D-06099 Halle(Saale), Germany, e-mail: krause@physik.uni-halle.de(corresponding author)
R. Krause-Rehrberg
Affiliation:
Martin-Luther-Universität Halle-Wittenberg, Fachbereich Physik, D-06099 Halle(Saale), Germany, e-mail: krause@physik.uni-halle.de(corresponding author)
P. Werner
Affiliation:
Max Planck Institute of Microstructure Physics, Halle/Saale D-06120, Germany
R. Weil
Affiliation:
Technion-Israel Institute of Technology, Solid State Institute, 32000 Haifa, ISRAEL
W. Beyer
Affiliation:
Institut für Schicht- und lonentechnik, Forschungszentrum Jülich, D-52425 Julich, Germany
R. Butz
Affiliation:
Institut für Schicht- und lonentechnik, Forschungszentrum Jülich, D-52425 Julich, Germany
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Abstract

The crystallization behavior (ordering) of undoped and boron-doped Si0.5Ge0.5 films, deposited on SiO2/Si(001) substrate by molecular beam epitaxy in hish vacuum at room temperature, were studied by XRD, HRTEM and in situ by Doppler broadening spectroscopy using monoenergetic positrons. Some decomposition features of SiGe solid solutions were demonstrated via splitting the XRD peaks at high temperatures. The SiGe decomposition was detected in the precrystalline state of the SiGe undoped and doped films in the temperature range from 450 to 600 K by compaering S- and W-parameters of SiGe with that of amorphous silicon and germanium. In conclusion, we discuss model of internim ordering states before crystallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 581: Symposium F – Nanophase & Nanocomposite Materials II , 1999 , 187
Copyright
Copyright © Materials Research Society 2000

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References

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