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Crystallinity and Wet Etch Behavior of HfO2 Films Grown by MOCVD

  • Katherine L. Saenger (a1), Cyril Cabral (a1), Paul C. Jamison (a1), Edward Preisler (a1) and Andrew J. Kellock (a2)...

Abstract

The crystallinity and wet etching behaviors of ultrathin (<10 nm) HfO2 films grown by metal organic chemical vapor deposition (MOCVD) were examined as a function of deposition temperature, film thickness, and post-deposition annealing. Films 3 nm in thickness deposited at 400 or 500 °C were amorphous as-deposited and slowly etchable in aqueous HF; after annealing at 700 °C, the same films showed some nanocrystallinity and were impervious to HF. However, thicker films grown under the same conditions showed significant crystallinity and were impervious to HF even as-deposited. These observations, in combination with measurements on various samples etched back by an Ar+ ion damage/wet etch process, suggest a film structure comprising an initially amorphous near-interface region capped with a HF-resistant crystalline upper layer. It was found that the initially amorphous near-interface region (the bottom 1–3 nm) of films grown at 500 °C can be induced to at least partially crystallize as the upper part of the film starts becoming crystalline as-deposited, but that this near-interface region remains at least partially amorphous after annealing at 700°C.

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1. Gousev, E.P., Cabral, C. Jr, Copel, M., D'Emic, C., and Gribelyuk, M., Microelectronic Engineering 69 145 (2003).
2. Ho, M.-Y., Gong, H., Wilk, G.D., Busch, B.W., Green, M.L., Voyles, P.M., Muller, D.A., Bude, M., Lin, W.H., See, A., Loomans, M.E., Lahiri, S.K., and Raisanen, P.I., J. Appl. Phys. 93 1477 (2003).
3. Hausmann, D.M. and Gordon, R.G., J. Crystal Growth 249 251 (2003).
4. Saenger, K.L., Okorn-Schmidt, H.F., and D'Emic, C.P., Mat. Res. Soc. Symp. Proc. 745 79 (2003).

Crystallinity and Wet Etch Behavior of HfO2 Films Grown by MOCVD

  • Katherine L. Saenger (a1), Cyril Cabral (a1), Paul C. Jamison (a1), Edward Preisler (a1) and Andrew J. Kellock (a2)...

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