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Crystalline and Electrical Properties of ITO Semiconductive Films deposited by Atmospheric RF Plasma Technique

  • R. W. Moss (a1), S. Misture (a1), D. H. Lee (a1), R. A. Condrate (a1) and X. W. Wang (a1)...

Abstract

Indium tin oxide (ITO) semiconductive films were deposited by an atmospheric RF plasma technique. Indium-to-tin (In:Sn) ratios varied from 10:0 to 0:10. A small amount of antimony was doped into some ITO samples for comparative studies. Substrate materials were soda-lime-silicate (SLS) float glass and fused silica glass. Structural, electrical, and optical properties were dependent on the In:Sn ratio, precursor material feeding rate, oxygen feeding rate, and other deposition conditions.

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1. Wang, X. W., Zhong, H. M., and Snyder, R. L., Appl. Phys. Lett. 57 1581 (1990).
2. Lee, D. H., Vuong, K. D., Williams, J. A. A., Fagan, J., Condrate, R. A. Sr, and Wang, X. W., J. Mater. Res. 11 895 (1996).
3. Lee, D.H., Moss, R.W., Vuong, K.D., Condrate, R. A. Sr, and Wang, X. W., to be published in Thin Solid Films.

Crystalline and Electrical Properties of ITO Semiconductive Films deposited by Atmospheric RF Plasma Technique

  • R. W. Moss (a1), S. Misture (a1), D. H. Lee (a1), R. A. Condrate (a1) and X. W. Wang (a1)...

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