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Crystalline and Electrical Properties of AlInN/GaN and AlN/GaN superlattices on GaN Grown by Metalorganic Vapor Phase Epitaxy

  • Shigeo Yamaguchi (a1), Yasuo Iwamura (a1), Masayoshi Kosaki (a2), Yasuhiro Watanabe (a2), Shingo Mochizuki (a2), Tetsuya Nakamura (a2), Yohei Yukawa (a2), Shugo Nitta (a2), Satoshi Kamiyama (a3), Hiroshi Amano (a3) and Isamu Akasaki (a4)...

Abstract

We have studied the crystalline and electrical properties of AlInN/GaN superlattices (SLs) and strained AlN/GaN SLs on GaN grown by metalorganic vapor phase epitaxy. A (0001) sapphire substrate was used. The SLs were grown using N2 carrier gas. X-ray analysis showed the eighth order satellite peak in AlInN/GaN SLs. Hall measurement showed an electron mobility of 946 cm2/Vs at highest (a sheet carrier density of 2.9x1012 cm-2) for AlInN/GaN 5SLs on GaN at 295K, and showed a value of 11432 cm2/Vs (1.99x1012cm-2) at 170K, and a value of 2610 cm2/Vs (3.38x1012cm-2) at 295K for AlN/GaN 10SLs on GaN.

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