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Crystal Originated Singularities on Silicon Wafers After SC1 Cleaning

Published online by Cambridge University Press:  25 February 2011

E. Morita ,
J. Ryuta ,
T. Tanaka  and
Y. Shimanuki
E. Morita
Affiliation:
Mitsubishi Materials Corporation, Central Research Institute, 1–297 Kitabukuro–cho, Omiya, Saitama, 330, Japan
J. Ryuta
Affiliation:
Mitsubishi Materials Corporation, Central Research Institute, 1–297 Kitabukuro–cho, Omiya, Saitama, 330, Japan
T. Tanaka
Affiliation:
Mitsubishi Materials Silicon Corporation, 314 Kaneuchi Nishisangao, Noda, Chiba 278, Japan
Y. Shimanuki
Affiliation:
Mitsubishi Materials Silicon Corporation, 314 Kaneuchi Nishisangao, Noda, Chiba 278, Japan
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Abstract

It is shown that a new type of singularity is formed on Si wafer surface by the Standard Cleaning 1 (SC1) of the RCA cleaning process″. Such singularities are perceived by laser particle counters as small particles on wafers. It is revealed that the singularities correspond to small shallow pits caused by the etching effect of the SCI cleaning solution. The origin of the pits seems to be some kind of defects in the melt–grown Si crystals. The authors named such “particles” as crystal originated “particles” (COPs).

The size–distribution of COPs after single SC1 cleaning cycle is estimated on the basis of variation in the number of COPs with the repeated cleaning cycles. It is revealed that the crystal pulling rate affects the size distribution of COPs. As the pulling rate becomes faster, COP becomes larger in number. From the total number of COPs after the first cleaning cycle and the etching depth, the volume density of origin of COPs can be estimated. The results show that, as the pulling rate becomes faster, the volume density of origin of COPs increases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 161
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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