Hostname: page-component-77c89778f8-swr86 Total loading time: 0 Render date: 2024-07-19T19:40:03.187Z Has data issue: false hasContentIssue false

Crystal Nucleation in Submicron Droplets of Pure Elements

Published online by Cambridge University Press:  15 February 2011

Louis M. Holzman
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI 53706
Thomas F. Kelly
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI 53706 Materials Science and Engr., University of Wisconsin, Madison, WI 53706
W. N. G. Hitchon
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI 53706 Electrical and Computer Engr., University of Wisconsin, Madison, WI 53706
Get access

Abstract

Liquid-to-crystal nucleation has been studied extensively through droplet experiments to locate examples of homogeneous nucleation. However, prior to this work very few examples have been found, which implies that the experiments have not been able to isolate heterogeneous nucleants in a small percentage of the droplets as is required. In this research, electrohydrodynamic atomization (EHD) is used to produce sub-Micron droplets of pure elements that are largely free of heterogeneous nucleants.

Diffraction patterns of individual EHD-produced droplets are viewed to determine the fraction of crystalline droplets produced as a function of droplet radius. These results are compared to theories for surface and volume heterogeneous nucleation and for homophase nucleation. It is found that Si and Ge nucleate through either homogeneous nucleation or nucleation by homophase impurities. Nucleation results for vanadium and iron were not conclusive.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. TurnbuU, D., J. Appl. Phys. 21, 1022 (1950).Google Scholar
2. Turnbull, D., J. Chem. Phys. 20, 411 (1952).Google Scholar
3. Miyazawa, Y. and Pound, G. M., J. Cryst. Growth 23, 45 (1974).Google Scholar
4. Perepczko, J. H., Mat. Sci. and Engr. 65, 125 (1984).Google Scholar
5. Drehman, A. J. and Turnbull, D., Scripta Metall. 15, 543 (1981).Google Scholar
6. Kim, Y-W., Lin, H.-M., and Kelly, T. F., Acta Metall. 37, 247 (1989).Google Scholar
7. Perel, J., Mahoney, J. F., Kalensher, B. E., Vickers, K. E. and Mehrabian, R., in Rapid Solidification Processing Principles and Technologies. Mehrabian, R., Kear, B. H. and Cohen, M. (Claitor's Publishing Division, Baton Rouge, LA, 1978) 258.Google Scholar
8. Perel, J., Mahoney, J. F., Duwez, P. and Kalensher, B. E., in Rapid Solidification Processing Principles and Technologies II. edited by Mehrabian, R., Kear, B. H. and Cohen, M. (Claitor's Publishing Division, Baton Rouge, LA, 1980) 287.Google Scholar
9. Turnbull, D., Progress in Mat. Sci. - Chalmers Anniversary Volume, 269, (1981).Google Scholar
10. Kelly, T. F., Cohen, M., and Vander, J. B. Sande, Met. Trans. 15A, 819 (1984).Google Scholar
11. Kelly, T. F. and Vander Sande, J. B., Int. J. of Rapid Solid. 3, 51 (1987).Google Scholar