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Crystal Growth of β-FeSi2 Thin Film on (100), (110) and (111) Plane of Si and Yittria-stabilized Zirconia Substrates

Published online by Cambridge University Press:  26 February 2011

Kensuke Akiyama ,
Satoru Kaneko ,
Takanori Kiguchi ,
Takashi Suemasu ,
Takeshi Kimura  and
Hiroshi Funakubo
Kensuke Akiyama
Affiliation:
akiyama@kanagawa-iri.go.jp, Kanagawa Industrial Technology Center, Electronic technology, 705-1 Shimoimaizumi, Ebina-shi, Kanagawa, 243-0435, Japan, +81-46-236-1500, +81-46-236-1525
Satoru Kaneko
Affiliation:
satoru@kanagawa-iri.go.jp, Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina-shi, Kanagawa, 243-0435, Japan
Takanori Kiguchi
Affiliation:
tkiguchi@cama.titech.ac.jp, Tokyo Institute of Technology, Advanced Materials Analysis, 2-12-1 O-okayama, Meguro-ku, Tokyo, 152-8550, Japan
Takashi Suemasu
Affiliation:
suemasu@bk.tsukuba.ac.jp, University of Tsukuba, Material Science, 1-1-1 Tennohdai, Tsukuba, Ibaraki, 305, Japan
Takeshi Kimura
Affiliation:
kimura@iem.titech.ac.jp, Tokyo Institute of Technology, Innovative and Engineered Materials, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8502, Japan
Hiroshi Funakubo
Affiliation:
funakubo@iem.titech.ac.jp, Tokyo Institute of Technology, Innovative and Engineered Materials, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8502, Japan
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Abstract

Iron silicide thin films were prepared on silicon (Si) and yittria-stabilized zirconia (YSZ) substrates using RF magnetron sputtering and evaporation methods. Epitaxial b-FeSi2 thin films were grown on (100) and (111) planes of Si and YSZ substrates, while noncrystallized films were deposited on (110) plane of both Si and YSZ substrates. The epitaxial relationships between the b-FeSi2 and YSZ were the same as those between b-FeSi2 and Si, in the case of (100) and (111) planes. It is possible that epitaxial b-FeSi2 film can be grown when substrates and b-FeSi2 surfaces consist of either a single element or only cations, while the crystalline film was not shown when either substrate or b-FeSi2 surface consists of a mixture of anions and cations or iron and silicon.

Keywords

crystal growththin filmepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 980: Symposium II – Advanced Intermetallic-Based Alloys , 2006 , 0980-II05-47
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Leong, D., Harry, M., Reeson, K.J., Homewood, K.P., Nature 387, 686 (1997).Google Scholar
2. Samsonov, G. V. and Vinitskii, I. M., “Handbook of Refractory Compounds” IFI/Plenum, New York, 1980.Google Scholar
3. Dusausoy, Y., Protas, J., Wandji, R. and Roques, B., Acta Crystallogr. B 27, 1209 (1971).Google Scholar
4. Mahan, J.E., Thanh, V. Le, Chevrier, J., Berbezier, I., Derrien, J. and Long, R. G., J. Appl. Phys. 74, 1747 (1993).Google Scholar
5. Akiyama, K., Kaneko, S., Kimura, T. and Funakubo, H., Jpn. J. Appl. Phys. 44, 2496 (2005).Google Scholar
6. Cherief, N., Anterroches, C.D., Cinti, R. C, Tan, T.A. Nguyen and Derrien, J., Appl. Phys. Lett. 55, 1671 (1989).Google Scholar
7. Suemasu, T., Tanaka, M., Fujii, T., Hashimoto, S., Kumagai, Y. and Hasegawa, F., Jpn. J. Appl. Phys. 36, L1225 (1997).Google Scholar
8. Muret, P. and Ali, I., J. Vac. Sci. & Technol. B 16, 1663 (1998).Google Scholar
9. Tanaka, M., Kumagai, Y., Suemasu, T. and Hasegawa, F., Jpn. J. Appl. Phys. 36, 3620 (1997).Google Scholar