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Crystal Growth of β-FeSi2 Thin Film on (100), (110) and (111) Plane of Si and Yittria-stabilized Zirconia Substrates

  • Kensuke Akiyama (a1), Satoru Kaneko (a2), Takanori Kiguchi (a3), Takashi Suemasu (a4), Takeshi Kimura (a5) and Hiroshi Funakubo (a6)...

Abstract

Iron silicide thin films were prepared on silicon (Si) and yittria-stabilized zirconia (YSZ) substrates using RF magnetron sputtering and evaporation methods. Epitaxial b-FeSi2 thin films were grown on (100) and (111) planes of Si and YSZ substrates, while noncrystallized films were deposited on (110) plane of both Si and YSZ substrates. The epitaxial relationships between the b-FeSi2 and YSZ were the same as those between b-FeSi2 and Si, in the case of (100) and (111) planes. It is possible that epitaxial b-FeSi2 film can be grown when substrates and b-FeSi2 surfaces consist of either a single element or only cations, while the crystalline film was not shown when either substrate or b-FeSi2 surface consists of a mixture of anions and cations or iron and silicon.

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Keywords

Crystal Growth of β-FeSi2 Thin Film on (100), (110) and (111) Plane of Si and Yittria-stabilized Zirconia Substrates

  • Kensuke Akiyama (a1), Satoru Kaneko (a2), Takanori Kiguchi (a3), Takashi Suemasu (a4), Takeshi Kimura (a5) and Hiroshi Funakubo (a6)...

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