Hostname: page-component-77c89778f8-vsgnj Total loading time: 0 Render date: 2024-07-19T01:07:56.822Z Has data issue: false hasContentIssue false

Crystal Growth and Defect Characterization of AlN Single Crystals

Published online by Cambridge University Press:  01 February 2011

Shaoping Wang
Affiliation:
swang@fairfieldcrystal.com, Fairfield Crystal Technology, LLC, 8 South End Plaza, New Milford, CT, 06776, United States, 860-354-2111, 860-354-3093
Balaji Raghothamachar
Affiliation:
braghoth@notes.cc.sunysb.edu, SUNY at Stony Brook, Department of Materials Science & Engineering, United States
Michael Dudley
Affiliation:
mdudley@notes.cc.sunysb.edu, SUNY at Stony Brook, Department of Materials Science & Engineering
Andrew G. Timmerman
Affiliation:
atimmerman@fairfieldcrystal.com, Fairfield Crystal Technology, LLC, United States
Get access

Abstract

In this paper, we report results from seeded AlN PVT growth experiments carried out using SiC seeds. The purpose of the experiments was to understand the morphology and crystalline quality of PVT AlN crystals grown under the crystal growth environments investigated. AlN single crystal films of 120-650μm in thickness were grown and freestanding AlN single crystal pieces up to 4×5mm2 were obtained. Surface morphologies and crystal defects in these AlN single crystals were studied using optical microscopy. Selected AlN single crystals were studied using a high-resolution triple-axis X-ray diffraction technique and a Synchrotron White Beam X-ray Diffraction Topography technique. Defects identified in AlN crystals are cracks, dislocations, grain boundaries and crystallite inclusions.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE

1. Slack, G.A., McNelly, T.F., J. Crystal Growth 34 (1976) 263.CrossRefGoogle Scholar
2. Slack, G.A., McNelly, T.F., J. Crystal Growth 42 (1977) 560.CrossRefGoogle Scholar
3. Rojo, J.C., Slack, G.A., Morgan, K., Raghothamachar, B., Dudley, M., Schowalter, L.. J. Crystal Growth, 231 (2001) 317321.CrossRefGoogle Scholar
4. Liu, L., Liu, B., Shi, Y., Edgar, J.H., MRS Internet J. Nitride Semicond. 6, 7 (2001) pp. 15.Google Scholar
5. Shi, Y., Liu, B., Liu, L., Edgar, J.H., Payzant, E.A., Hayes, J.M., Kuball, M., MRS Internet J. Nitride Semicond. 6, 5 (2001) pp. 15.Google Scholar
6. Noveski, V., Rchlesser, R., Mahajan, S., Beaudoin, S. and Sitar, Z., MRS Internet J. Nitride Semicond. 9, 2 (2004) pp. 16.Google Scholar
7. Epelbaum, B.M., Bickermann, M. and Winnacker, A., Materials Science Forum, Vols. 433–436 (2003) pp. 983986.CrossRefGoogle Scholar
8. Liu, L., Liu, B., Edgar, J.H., Rajasingam, S., and Kuball, M., J. Appl. Phys. 92 (2002) pp. 51835188.CrossRefGoogle Scholar