Hostname: page-component-7c8c6479df-hgkh8 Total loading time: 0 Render date: 2024-03-29T12:22:05.584Z Has data issue: false hasContentIssue false

The Crowdion Spreading and Radiation Stability Possibility of Non-Oxides

Published online by Cambridge University Press:  22 February 2011

Vladimir M. Koshkin
Affiliation:
Polytechnical University, Department of Physical Chemistry, 21 Frunze Str., 310002, Kharkov, Ukraine
Yuri N. Dmitriev
Affiliation:
Polytechnical University, Department of Physical Chemistry, 21 Frunze Str., 310002, Kharkov, Ukraine
Get access

Abstract

The paper suggests a criterion for selection of radiation stable semiconductors and dielectrics.

The search for materials with great radiation stability (RS) is one of the basic problems in materials science. The absolute RS of crystals could be provided only in case when all elementary radiation defects (Frenkel pairs) are unstable, and annihilated immediately at any low temperatures in the places whete they were born. The presence of an instability zone (IZ) of point defects vacancy (v) - interstitial atom (i) is a necessary condition for RS [1,2]. The characteristic radius r0 of IZ at v-i Coulomb interaction is on the order of 10-30 Å [3]. The important parameter is a mean distance x between stopping point of atom i, knocked out from its site, and the v born at this site. Without taking into account the periodic structure, the analytical expression for x was obtained[4]. The value of x appears to be not large. For example, if the knocked out atom has the energy of 10 keV, the mean distance between v and i is 10 Å in iron, and only 3 Å in copper (x < r0). So, the greatest part of i's seem to remain in IZ, and therefore must recombine with “their” own v's. This would result in RS being greater than what was really observed in majority of nonmetal crystals.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Koshkin, V.M., Gal'chinetskii, L.P., Kulik, V.N., Ulmanis, U.A., Solid State Communs. 13, 1 (1973).Google Scholar
2. Koshkin, V.M., Gal'chinetskii, L.P., Kulik, V.N., Ulmanis, U.A., Radiat. Eff. 29, 1 (1975).Google Scholar
3. Koshkin, V.M., Zabrodskii, Yu.R., Dokl. Akad. Nauk SSSR 227, 1323 (1976).Google Scholar
4. Holmes, D.K., Leibfried, G., J. Appl. Phys. 31, 1046 (1960).Google Scholar
5. Nelson, R.S., Thompson, M.W., Proc. Royal. Soc. 259, 458 (1961).Google Scholar
6. Koshkin, V.M., Dmitriev, Yu.N., Zabrodskii, Yu.R., Tarnopolskaya, R.A. and Ulmanis, U.A., Fiz. Tekhn. Poluprovod. 18, 1373 (1984).Google Scholar
7. Dmitriev, Yu., Koshkin, V., Ulmanis, U., Phys. Status Solidi A 106, K7 (1988).Google Scholar
8. Palatnik, L.S., Koshkin, V.M., Gal'chinetskii, L.P., Fiz. Tverd. Tela 4, 2365 (1962).Google Scholar
9. Zabrodskii, Yu.R. and Koshkin, V.M., Fiz. Tverd. Tela 18, 2857 (1976).Google Scholar
10. Koshkin, V.M., Gal'chinetskii, L.P., Kulik, V.N., Gusev, G.K., Ulmanis, U.A., At. Energ. 42, 290 (1977).Google Scholar
11. Koshkin, V.M., Atroshchenko, L.V., Gal'chinetskii, L.P. et al. , Patent of USSR No 293395 (1970).Google Scholar
12. Gal'chinetskii, L.P., Katrunov, K.A., Koshkin, V.M., Kulik, V.N., At. Energ. 50, 144 (1981).Google Scholar