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Cross-Sectional Transmission Electron Microscopy of Si-Based Nanostructures

Published online by Cambridge University Press:  10 February 2011

Maxim V. Sidorov  and
David J. Smith
Maxim V. Sidorov
Affiliation:
Center for Solid State Science, Arizona State University, Tempe AZ 85287-1704 USA
David J. Smith
Affiliation:
also at Department of Physics and Astronomy, Arizona State University, Tempe
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Abstract

This work demonstrates the successful application of the precision cross-sectioning technique to the characterization of two types of Si-based nanostructures. Careful wedge-polishing of an array of metal-coated poly-Si microlines gave electron transparency over areas as broad as 1.5 mm across. A single, specific, SET (Single Electron Transistor), having dimensions of 4 × 4 μm2, was cross-sectioned for examination using conventional and high-resolution TEM imaging.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 773
Copyright
Copyright © Materials Research Society 1997

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