Hostname: page-component-848d4c4894-mwx4w Total loading time: 0 Render date: 2024-06-28T12:34:01.260Z Has data issue: false hasContentIssue false
  • English
  • Français

Cross-Sectional TEM Studies of Indentation-Induced Phase Transformations in Si: Indenter Angle Effects

Published online by Cambridge University Press:  01 February 2011

Songqing Wen ,
James Bentley ,
Jae-il Jang  and
G. M. Pharr
Songqing Wen
Affiliation:
The University of Tennessee, Dept. of Materials Science & Engr., Knoxville TN 37996
James Bentley
Affiliation:
Oak Ridge National Libratory, Metals & Ceramics Division, Oak Ridge TN 37831
Jae-il Jang
Affiliation:
The University of Tennessee, Dept. of Materials Science & Engr., Knoxville TN 37996
G. M. Pharr
Affiliation:
The University of Tennessee, Dept. of Materials Science & Engr., Knoxville TN 37996 Oak Ridge National Libratory, Metals & Ceramics Division, Oak Ridge TN 37831
Get access

Abstract

Nanoindentations were made on a (100) single crystal Si wafer at room temperature with a series of triangular pyramidal indenters having centerline-to-face angles ranging from 35° to 85°. Indentations produced at high (80 mN) and low (10 mN) loads were examined in plan-view by scanning electron microscopy and in cross-section by transmission electron microscopy. Microstructural observations were correlated with the indentation load-displacement behavior. Cracking and extrusion are more prevalent for sharp indenters with small centerline-to-face angles, regardless of the load. At low loads, the transformed material is amorphous silicon for all indenter angles. For Berkovich indentations made at high-load, the transformed material is a nanocrystalline mix of Si-I and Si-III/Si-XII, as confirmed by selected area diffraction. Extrusion of material at high loads for the cube-corner indenter reduces the volume of transformed material remaining underneath the indenter, thereby eliminating the pop-out in the unloading curve.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 841: Symposium R – Fundamentals of Nanoindentation and Nanotribology III , 2004 , R10.4/T6.4
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hu, J.Z., Merkle, L.D., Menoni, C.S., and Spain, I.L., Phys. Rev. B34, 4679 (1986).Google Scholar
2. Pharr, G.M., Oliver, W.C., and Harding, D.S., J. Mater. Res. 6, 1129 (1991).Google Scholar
3. Pharr, G.M., Oliver, W.C., Cook, R.F., Kirchner, P.D., Kroll, M.C., Dinger, T.R., and Clarke, D.R., J. Mater. Res. 7, 961 (1992).Google Scholar
4. Domnich, V. and Gogotsi, Y., Rev. Adv. Mater. Sci. 3, 1 (2002).Google Scholar
5. Callahan, D. L. and Morris, J. C., J. Mater. Res. 7, 1614 (1992).Google Scholar
6. Page, T.F., Oliver, W.C., and McHargue, C.J., J. Mater. Res. 7, 2431 (1992).Google Scholar
7. Wu, Y.Q., Yang, X.Y., Xu, Y. B., Acta Mater. 47, 2431 (1999); J. Mater. Res. 14, 682 (1999).Google Scholar
8. Mann, A.B., van Heerden, D., Pethica, J.B., Bowes, P., and Weihs, T.P., J. Mater. Res. 15, 1754 (2000).Google Scholar
9. Lloyd, S.J.., Molana-Aldareguia, J.M., and Clegg, W.J., J. Mater. Res. 16, 3347 (2001).Google Scholar
10. Bradby, J.E., Williams, J.S., Wong-Leung, J., Swain, M.V., and Munroe, P., Appl. Phys. Lett. 77, 3749 (2000); J. Mater. Res. 16, 1500 (2001).Google Scholar
11. Saka, H., Himatani, A.S., Suganuma, M., and Suprija, , Phil. Mag. A82, 1971 (2002).Google Scholar
12. Ge, D.B., Domnich, V., and Gogotsi, Y., J. Appl. Phys. 93, 2418 (2003).Google Scholar
13. Zarudi, I. and Zhang, L.C., Appl. Phys. Lett. 82, 874 (2003); J. Mater. Res. 19, 332 (2004).Google Scholar
14. Jang, J-I., Lance, M.J., Wen, S.Q., Tsui, T.Y., and Pharr, G.M., Acta Mater. (in press)Google Scholar