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Critical Length and Resistance Saturation Effects in Al(Cu) Interconnects

Published online by Cambridge University Press:  10 February 2011

M. Gall ,
J. Müller ,
D. Jawarani ,
C. Capasso ,
R. Hernandez  and
H. Kawasaki
M. Gall
Affiliation:
Advanced Products Research and Development Laboratory, Motorola Austin, TX, USA
J. Müller
Affiliation:
Advanced Products Research and Development Laboratory, Motorola Austin, TX, USA
D. Jawarani
Affiliation:
Advanced Products Research and Development Laboratory, Motorola Austin, TX, USA
C. Capasso
Affiliation:
Advanced Products Research and Development Laboratory, Motorola Austin, TX, USA
R. Hernandez
Affiliation:
Advanced Products Research and Development Laboratory, Motorola Austin, TX, USA
H. Kawasaki
Affiliation:
Advanced Products Research and Development Laboratory, Motorola Austin, TX, USA
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Abstract

A new test structure for electromigration failure analysis of via-interconnect metallization schemes was developed. Multi-via/interconnect chain arrays were used in a parallel/serial testing arrangement. Due to improved statistical sampling, the multi-via test structures enabled measurement of drift velocity phenomena at via/interconnect interfaces with a very limited number of test devices per stressing condition, and without reducing the signal to noise ratio. Furthermore, realistic, production-type metallization schemes can be characterized without usually required “traditional” drift velocity-type metal stacks incorporating highly resistive shunt-layers. Critical length effects were investigated as a function of line length and current density. At interconnect lengths close to the critical Blech-length, resistance saturation effects were encountered and used for calculations of the critical current density-length product, (jl)*. Furthermore, a new resistance saturation model was developed and found to correlate well with the acquired data. Critical length effects can accurately be measured and used for length-dependent interconnect performance evaluation on the device-level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 516: Symposium E – Low Dielectric Constant Materials IV , January 1998 , 231
Copyright
Copyright © Materials Research Society 1998

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