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Creation of Interface States at the Silicon/Silicon Dioxide Interface by UV Light Without Hole Trapping

Published online by Cambridge University Press:  25 February 2011

W. K. Schubert ,
C. H. Seager  and
K. L. Brower
W. K. Schubert
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, N.M. 87185
C. H. Seager
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, N.M. 87185
K. L. Brower
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, N.M. 87185
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Abstract

Photoinjection of electrons into silicon dioxide in metal-oxide-semiconductor (MOS) capacitors with 3.5 eV light is shown to create interface states with no apparent hole trapping precursor. The creation rate of these interface states depends strongly upon whether injection is from the gate metal or the silicon substrate, and on the forming gas annealing sequence used to passivate growth-induced interface states. A mechanism involving electron-induced release of hydrogen in the oxide is consistent with some aspects of the data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 415
Copyright
Copyright © Materials Research Society 1989

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