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Creation and Annealing out Mechanism of Defects in Ion-Implanted Si Crystals Investigated by Positron Annihilation

Published online by Cambridge University Press:  10 February 2011

S. Tanigawa
S. Tanigawa*
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan, tanigawa@esys.tsukuba.ac.jp
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Abatract

Vacancy-type defects in Si crystals introduced by ion implantation have been investigated by an energy-variable positron beam The present paper describes the general feature of point defects induced by ion implantation from the point of view of their dependence on implanted ion species, ion dose, ion energy, implanted targets, thermal after implantation, the presence of oxide overlayers and so on.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 287
Copyright
Copyright © Materials Research Society 1997

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References

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