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Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD

Published online by Cambridge University Press:  21 February 2011

X. Li ,
A. M. Jones ,
S. D. Roh ,
D. A. Turnbull ,
E. E. Reuter ,
S. Q. Gu ,
S. G. Bishop  and
J. J. Coleman
X. Li
Affiliation:
Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
A. M. Jones
Affiliation:
Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
S. D. Roh
Affiliation:
Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
D. A. Turnbull
Affiliation:
Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
E. E. Reuter
Affiliation:
Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
S. Q. Gu
Affiliation:
Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
S. G. Bishop
Affiliation:
Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
J. J. Coleman
Affiliation:
Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
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Abstract

We have studied GaN films grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrates using different buffer layer structures. Surface morphology was characterized by scanning electron microscopy (SEM). Optical properties were measured using photoluminescence (PL), cathodoluminescence (CL) spectroscopy and catho-luminescence wavelength imaging (CLWI) method. It is found that the hexagonal pit-like defects in morphology are associated with the D-A/e-A transition band in the PL and CL spectra. The same correlation of morphology with optical properties is observed for the GaN films grown by selective area epitaxy (SAE). In addition, the possibility of improving optical quality by SAE is investigated. The SAE depth profile is simulated for the first time, and satisfactory results are obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 943
Copyright
Copyright © Materials Research Society 1996

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References

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