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Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD

  • X. Li (a1), A. M. Jones (a1), S. D. Roh (a1), D. A. Turnbull (a1), E. E. Reuter (a1), S. Q. Gu (a1), S. G. Bishop (a1) and J. J. Coleman (a1)...

Abstract

We have studied GaN films grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrates using different buffer layer structures. Surface morphology was characterized by scanning electron microscopy (SEM). Optical properties were measured using photoluminescence (PL), cathodoluminescence (CL) spectroscopy and catho-luminescence wavelength imaging (CLWI) method. It is found that the hexagonal pit-like defects in morphology are associated with the D-A/e-A transition band in the PL and CL spectra. The same correlation of morphology with optical properties is observed for the GaN films grown by selective area epitaxy (SAE). In addition, the possibility of improving optical quality by SAE is investigated. The SAE depth profile is simulated for the first time, and satisfactory results are obtained.

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1 (a) Morkoc, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B. et al. , J. Appl. Phys. 76, 1363 (1994). (b) S. Strite, M. E. Lin, and H. Morkoc, Thin Sol. Films 231, 197 (1993); S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10, 1237 (1992). (c) R. F. Davis, Proc. IEEE 79, 702 (1991). (d) J. H. Edgar, J. Mater. Res. 7, 235 (1992). (e) J. I. Pankove, Mater. Res. Soc. Symp. Proc. 162, 515 (1990). (f) D. Elwell and M. M. Elwell, Prog. Cryst. Growth Charact. 17, 53 (1988).
2 Li, X., Forbes, D. V., Gu, S. Q., Turnbull, D. A., Bishop, S. G. and Coleman, J. J., J. Electron. Mater. 24, 1711 (1995).
3 Jones, A. M., Osowski, M. L., Lammert, R. M., Dantzig, J. A., and Coleman, J. J., J. Electron. Mater. 24, 1631 (1995).
4 Grundmann, M., Christen, J., Bimberg, D., Hashiomoto, A., Fukunaga, T., and Watanabe, N., Appl. Phys. Lett. 58, 2090 (1991).
5 Rammohan, K., Rich, D. H., Goldman, R. S., Chen, J., Wieder, H. H., and Kavanagh, K. L., Appl. Phys. Lett. 66, 869 (1995).
6 Christen, J., Grundmann, M., and Bimberg, D., J. Vac. Sci. & Technol. B 9, 2358 (1991).
7 Turnbull, D. A. et al. , unpublished.
8 Fischer, F., Wetzel, C., Haller, E. E., and Meyer, B. K., Appl. Phys. Lett. 67, 1298 (1995).
9 Gray, L. J., Chrisholm, M. F., and Kaplan, T., Appl. Phys. Lett. 66, 1924 (1995) and references therein.
10 Yamaguchi, M., Tachikawa, M., Sugo, M., Kondo, S., and Itoh, Y., Appl. Phys. Lett. 56, 27 (1990).
11 Ohashi, T., J. Mater. Res. 7, 3032 (1992).
12 Karam, N. H., Haven, V., Vernon, S. M., El-Marsry, N., Lingunis, E. H., and Haegel, N., J. Cryst. Growth 107, 129 (1991).
13 Akasaki, I. and Amano, H., J. Electrochem. Soc. 141, 2266 (1994).
14 Kato, Y., Kitamura, S., Haramatsu, K., and Sawaki, N., J. Cryst. Growth 144, 133 (1994).
15 Nagahara, M., Miyoshi, S., Yaguchi, H., Onabe, K., Shiraki, Y., and Ito, R., J. Cryst. Growth 145, 197 (1994); Jpn. J. Appl. Phys. part 1, 33, 694 (1994).

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