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Correlation of Electrical Properties With Defects in A Homoepitaxial Chemical-Vapor-Deposited Diamond

  • S. Han (a1), G. Rodriguez (a1), A. Taylori (a1), M. A. Plano (a2), M. D. Moyer (a2), M. A. Moreno (a2), L. S. Pan (a3), D. B. Black (a4), H. Burdette (a4), J. W. Ager (a5) and A. Chen (a5)...

Abstract

A high-quality, low-stress 200 gim epitaxial diamond film has been grown on a 400 μm thick high-temperature-high-pressure Ila diamond. X-ray diffraction images of the film indicate that a large region of the film is fairly defect free and individual dislocations have been imaged in this region. Depth-resolved Raman results indicate that the region of the film with a low density of defects also has lower stress than in the higher defect density region. Transient photoconductivity measurements were performed on the high and low line defect density regions of the homoepitaxial diamond film to determine the effects of the stress and defect density on the combined electron-hole mobility and carrier lifetime. The correlation between the electrical properties and the x-ray diffraction imaging suggests that line defects may not be the limiting factor in the carrier transport at the present film quality

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[1] Black, D.R., Burdette, H.E., Robbins, L., Plano, M.A., Moyer, M. Dale, Moreno, M.A., Pan, L.S., Kania, D.R. and Banholzer, W.F., Advances in New Diamond Science and Technology, Saito, S., Fujimori, N., Fukunaga, O., Kamo, M., Kobashi, K. and Yoshikawa, M., Editors, MY, Tokyo (1994) 251.
[2] Black, D.R., Burdette, H.E., Piano, M.A., Moyer, M. Dale, Moreno, M.A., IIIAger, J.W. and Chen, A.L., “Oberservation of Individual Defects in a Homoepitaxial Diamond Film”;, the Fourth International Symposium on Diamond Films, Ravi, K.V., Dismukes, J.P., Davidson, J.L, Spear, K.E., Hange, R.H., Spitsyn, B. V., Editors, Reno, Nevada, U.S.A, May 1995.
[3] IIIAger, J.W. and Drory, M.D., Phys. Rev. B, 48 (1993) 2601.
[4] Hewlett Packard 54120A Main Frame with 54121A 4-channel 20-GHz Sampling Head.
[5] Pan, L.S., Kania, D.R., Pianetta, P., IIIAger, J.W., Landstrass, M.I., Han, S. and Landen, O.L., J. Appl Phys, 73 (6) (1993) 2888.
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Correlation of Electrical Properties With Defects in A Homoepitaxial Chemical-Vapor-Deposited Diamond

  • S. Han (a1), G. Rodriguez (a1), A. Taylori (a1), M. A. Plano (a2), M. D. Moyer (a2), M. A. Moreno (a2), L. S. Pan (a3), D. B. Black (a4), H. Burdette (a4), J. W. Ager (a5) and A. Chen (a5)...

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