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Copper Electroplating on Zero-Thickness ALD Platinum for Nanoscale Computer Chip Interconnects

Published online by Cambridge University Press:  01 February 2011

Alain Kaloyeros ,
Yu Zhu ,
Kathleen Dunn ,
Richard Mayti ,
Christopher Miller  and
Matthew Breslin
Alain Kaloyeros
Affiliation:
akaloyeros@uamail.albany.edu, University at Albany-SUNY, College of Nanoscale Science and Engineering, 251 Fuller Road, Albany, New York, 12203, United States, 5184424533
Yu Zhu
Affiliation:
YZhu@uamail.albany.edu, University at Albany-SUNY, College of Nanoscale Science and Engineering, albany, new york, 12203, United States
Kathleen Dunn
Affiliation:
kdunn@uamail.albany.edu, University at Albany, College of Nanoscale Science and Engineering, albany, new york, 12203, United States
Richard Mayti
Affiliation:
RMayti@uamail.albany.edu, University at Albany, College of Nanoscale Science and Engineering, albany, new york, 12203, United States
Christopher Miller
Affiliation:
CMiller@uamail.albany.edu, University at Albany, College of Nanoscale Science and Engineering, Albany, New York, 12203, United States
Matthew Breslin
Affiliation:
MBreslin@uamail.albany.edu, University at Albany, College of Nanoscale Science and Engineering, Albany, New York, 12203, United States
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Abstract

Ultra-thin platinum (Pt) films grown by atomic layer deposition (ALD) have been investigated as an alternative to conventional physical vapor deposited (PVD) Cu as seed layer for copper (Cu) electroplating. The wetting angles between the electrolyte and both Pt and Cu seed layers were analyzed using sessile-drop contact-angle analysis prior to plating. Both constant current and pulse reverse current (PRC) were applied to electroplate Cu on both types of blanket seed layers. Scanning electron microscope (SEM) revealed that Cu nucleation density on ALD Pt is lower than on its PVD Cu counterpart, after 30 seconds plating using PRC. Nevertheless, Cu nuclei were observed after only 1.0 minute plating on ALD Pt surfaces, and continuous Cu films were achieved at longer plating times. To fill trench structures coated with ALD Pt/TaN, PRC was applied using the same organic-additive-free electrolyte. Initial results suggest that these seed layers were adequate for ECD fill of trenches with 200 nm feature size and aspect ratio 7:1. The composition and microstructure of the Cu films were analyzed by Auger electron spectroscopy (AES), X-ray diffraction (XRD), and cross-sectional transmission electron microscopy (TEM). Thermal stability of the Cu/Pt system was examined by annealing in forming gas at 450°C for 1 hour and subsequent analysis by XRD and TEM.

Keywords

CuPtB
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F05-08
Copyright
Copyright © Materials Research Society 2006

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