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Controlling the Amount of Si-OH Bonds for the Formation of High-Quality Low-Temperature Gate Oxides for Poly-Si TFTs

Published online by Cambridge University Press:  10 February 2011

Katsuhisa Yuda ,
Hiroshi Tanabe ,
Kenji Sera  and
Fujio Okumura
Katsuhisa Yuda
Affiliation:
Functional Devices Research. Laboratories, NEC Corporation 1-1 Miyazaki 4-chome, Miyamae-ku, Kawasaki, Kanagawa 216-8555, Japan
Hiroshi Tanabe
Affiliation:
Functional Devices Research. Laboratories, NEC Corporation 1-1 Miyazaki 4-chome, Miyamae-ku, Kawasaki, Kanagawa 216-8555, Japan
Kenji Sera
Affiliation:
Electronic Component Development Division, NEC Corporation 1120, Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
Fujio Okumura
Affiliation:
Functional Devices Research. Laboratories, NEC Corporation 1-1 Miyazaki 4-chome, Miyamae-ku, Kawasaki, Kanagawa 216-8555, Japan
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Abstract

Lowering process temperatures for polysilicon thin-film-transistors (TFTs) has given rise to new worries about the quality of TFT gate oxides. Specifically, presence of large amounts of SiOH bonds in gate oxides has become a matter of concern. We discuss methods for suppressing the formation of Si-OH bonds during chemical vapor deposition (CVD) of low-temperature processed (LTP) gate oxides. The use of remote-plasma CVD and control of the reaction between the silicon source gas and the oxygen source gas are both shown to be effective. We also show that decreased amounts of Si-OH bonds in LTP-CVD gate oxides result in desirable decreases in fixed oxide charge densities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998 , 167
Copyright
Copyright © Materials Research Society 1998

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