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Controlling Crystallization Structures in Thin Si Film for Improving Characteristics of MEMS Resonators

  • Shinya Kumagai (a1) (a2), Hiromu Murase (a1), Takashi Tomikawa (a1), Syohei Ogawa (a1), Ichiro Yamashita (a3) (a2), Yukiharu Uraoka (a3) (a2) and Minoru Sasaki (a1) (a2)...

Abstract

An approach to control the tensile stress and Q factor of thin Si film beams in MEMS resonators was investigated. Metal-induced lateral crystallization (MILC) using Ni nanoparticles that were synthesized within a cage-shaped protein, apoferritin, was applied to a thin morphous Si film for making a MEMS resonator with thin film beams. The MILC produced a thin polycrystalline Si (poly-Si) film with large crystallized domain (50-60 μm) with nearly the same crystalline orientation, whereas the poly-Si film obtained by conventional annealing (without MILC) consisted of small grains (less than 1 μm) with random orientation. The MEMS resonator with a beam made of poly-Si film by MILC was fabricated. The large domain size and the improved crystallinity increased the tensile stress, and resulted in 20% increase in Q factor in the resonant characteristics.

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Keywords

Controlling Crystallization Structures in Thin Si Film for Improving Characteristics of MEMS Resonators

  • Shinya Kumagai (a1) (a2), Hiromu Murase (a1), Takashi Tomikawa (a1), Syohei Ogawa (a1), Ichiro Yamashita (a3) (a2), Yukiharu Uraoka (a3) (a2) and Minoru Sasaki (a1) (a2)...

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