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Controlling 2d/3d Growth of Gan by Molecular Beam Epitaxy: From Superlattices to Quantum Dots

  • B. Daudin (a1), G. Feuillet (a1), F. Widmann (a1), Y. Samson (a1), J. L. Rouviere (a1), N Pelekanos (a1) and G. Fishman (a2)...

Abstract

By controlling the Stranski-Krastanov growth mode of strained GaN deposited by molecular beam epitaxy on AlN, it is shown that islands with nanometric dimensions can be elaborated. The luminescence energy of the wetting layer is 4.6 eV, determined by cathodoluminescence experiments. The luminescence of dots with a mean size of 14 nm in diameter and 2nm in height is 3.8 eV and remains constant in intensity with increasing temperature, as an evidence of 0-dimension confinement effect. Theoretical analysis of the wetting layer luminescence energy is carried out, taking into account the non parabolicity in the conduction band.

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Controlling 2d/3d Growth of Gan by Molecular Beam Epitaxy: From Superlattices to Quantum Dots

  • B. Daudin (a1), G. Feuillet (a1), F. Widmann (a1), Y. Samson (a1), J. L. Rouviere (a1), N Pelekanos (a1) and G. Fishman (a2)...

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